inchange semiconductor product specification silicon npn power transistor 3DD523 description with to-3 package dc current gain -h fe = 20?70 @ i c = 4 adc collector?emitter saturation voltage - v ce(sat) = 1.1 vdc (max) @ i c = 4 adc excellent safe operating area applications designed for general?purpose switching and amplifier applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.52 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistor 3DD523 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 60 v v cer collector-emitter sustaining voltage i c =0.2a ;r be =100 70 v v cesat-1 collector-emitter saturation voltage i c =4a ;i b =0.4a 1.1 v v cesat-2 collector-emitter saturation voltage i c =10a ;i b =3.3a 3.0 v v be base-emitter on voltage i c =4a ; v ce =4v 1.5 v i ceo collector cut-off current v ce =30v; i b =0 0.7 ma i cex collector cut-off current v ce =100v; v be(off) =1.5v t c =150 1.0 5.0 ma i ebo emitter cut-off current v eb =7v; i c =0 5.0 ma h fe-1 dc current gain i c =5a ; v ce =5v 55 80 h fe-2 dc current gain i c =10a ; v ce =4v 5.0 i s/b second breakdown collector current with base forward biased v ce =40vdc,t=1.0s, nonrepetitive 2.87 a f t transition frequency i c =0.5a ; v ce =10v 2.5 mhz
inchange semiconductor product specification 3 silicon npn power transistor 3DD523 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
|
