AO4260 v ds i d (at v gs =10v) 18a r ds(on) (at v gs =10v) < 5.2m w r ds(on) (at v gs =4.5v) < 6.3m w symbol the AO4260 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance. both conduction an d switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synch ronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v g d s symbol v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c mj avalanche current c 211 a 65 a i d 18 14 130 v maximum units parameter v 20 gate-source voltage drain-source voltage 60 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a thermal characteristics w 3.1 2 t a =70c junction and storage temperature range -55 to 150 c 60v n-channel mosfet general description features www.freescale.net.cn 1 / 6
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.4 v i d(on) 130 a 4.3 5.2 t j =125c 6.9 8.4 5 6.3 m w g fs 70 s v sd 0.68 1 v i s 4.5 a c iss 4940 pf c oss 445 pf c rss 32 pf r g 0.4 0.9 1.4 w q g (10v) 71 100 nc q g (4.5v) 31 45 nc q gs 12.5 nc q gd 8.5 nc t d(on) 8.5 ns t 8.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =18a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =18a v gs =4.5v, i d =16a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =30v, r =1.67 w , reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =30v, i d =18a gate source charge gate drain charge total gate charge t r 8.5 ns t d(off) 50 ns t f 15.5 ns t rr 22 ns q rr 96 nc body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =18a, di/dt=500a/ m s turn-off fall time v gs =10v, v ds =30v, r l =1.67 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AO4260 60v n-channel mosfet www.freescale.net.cn 2 / 6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =16a v gs =10v i d =18a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 4v 10v 3.5v 4.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 10 12 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =18a 25 c 125 c AO4260 60v n-channel mosfet www.freescale.net.cn 3 / 6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =18a 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c figure 10: maximum forward biased safe operating area (note f) (note c) AO4260 60v n-channel mosfet www.freescale.net.cn 4 / 6
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w AO4260 60v n-channel mosfet www.freescale.net.cn 5 / 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr AO4260 60v n-channel mosfet www.freescale.net.cn 6 / 6
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