symbol 10 sec steady state v ds v gs 0.5 0.5 0.5 0.45 i dm 0.38 0.28 0.24 0.18 t j , t stg symbol typ max t 10s 275 330 steady-state 360 450 steady-state r jl 300 350 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a r ja c/w maximum junction-to-ambient a c/w parameter continuous drain current a, f units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v a c t a =70c i d pulsed drain current b power dissipation a t a =25c junction and storage temperature range w drain-source voltage 20 8 -55 to 150 3 gate-source voltage p d AO5804E features v ds (v) = 20v i d = 0.5 a (v gs = 4.5v) r ds(on) < 0.55 ? (v gs = 4.5v) r ds(on) < 0.68 ? (v gs = 2.5v) r ds(on) < 0.80 ? (v gs = 1.8v) the AO5804E/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. AO5804E and AO5804El are electrically identical. -rohs compliant -AO5804El is halogen free g1 d1 s1 g2 d2 s2 dual n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v 1 t j =55c 5 1 a 100 a v gs(th) 0.45 0.6 1 v i d(on) 3 a 0.4 0.55 t j =125c 0.6 0.85 0.48 0.68 0.6 0.8 g fs 1.5 s v sd 0.65 1 v i s 0.4 a c iss 35 45 pf c oss 8 pf c rss 6 pf q g 0.63 1 nc q gs 0.08 nc q gd 0.16 nc t d(on) 4.5 ns t r 3.3 ns t d(off) 78 ns t f 32 ns t rr 8 10 ns q rr 2 nc 0.5 0.45 0.28 0.18 body diode reverse recovery time i f =0.5a, di/dt=100a/ s body diode reverse recovery charge i f =0.5a, di/dt=100a/ s switching parameters v gs =4.5v, v ds =10v, i d =0.5a v gs =5v, v ds =10v, r l =50 , r gen =3 turn-on rise time turn-off delaytime turn-off fall time gate drain charge turn-on delaytime diode forward voltage i s =0.1a,v gs =0v total gate charge gate source charge maximum body-diode continuous current dynamic parameters v gs =0v, v ds =10v, f=1mhz reverse transfer capacitance input capacitance output capacitance v ds =5v, i d =0.5a v gs =1.8v, i d =0.3a v gs =4.5v, i d =0.5a forward transconductance on state drain current r ds(on) static drain-source on-resistance i dss ? v ds =0v, v gs =8v v ds =20v, v gs =0v v ds =0v, v gs =4.5v zero gate voltage drain current i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 a, v gs =0v v gs =2.5v, i d =0.5a v gs =4.5v, v ds =5v gate threshold voltage v ds =v gs i d =250 a gate-body leakage current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the maximum current rating is limited by bond-wires rev3: aug 2008 AO5804E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0.5 0.45 0.28 0.18 0 1 2 3 0 1 2 3 4 v ds (volts) figure 1: on-region characteristics i d (a) 1v 2v 4.5v vgs=1.5v 0 0.5 1 1.5 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics i d (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v id=0.5a v gs =1.8v id=-0.3a 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ) 25c 125c v ds =5v v gs =1.8v v gs =4.5v i d =0.5a 25c 125c 3.5v v gs =2.5v v gs =2.5v id=0.5a 2.5v AO5804E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0.5 0.45 0.28 0.18 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 20 40 60 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) ciss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss v ds =10v i d =0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =450c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 10ms 1ms 1s dc r ds(on) limited t j(max) =150c t a =25c 100 s 10s 0.1s AO5804E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off AO5804E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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