inchange semiconductor isc product specification isc silicon npn power transistor BUV10 description high switching speed high current capability applications designed for high current,high speed,high power applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 160 v v cex collector-emitter voltage v be = -1.5v 160 v v cer collector-emitter voltage r be = 100 140 v v ceo collector-emitter voltage 125 v v ebo emitter-base voltage 7 v i c collector current-continuous 25 a i cm collector current-peak 30 a i b b base current-continuous 6 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV10 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 125 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 1a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 20a ;i b = 2a 2.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 1a 1.5 v i ceo collector cutoff current v ce = 100v; i b = 0 1.5 ma i cex collector cutoff current v ce = 160v;v be = -1.5v v ce = 160v;v be = -1.5v;t c =125 1.5 6.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.5 ma h fe-1 dc current gain i c = 10a ; v ce = 4v 20 60 h fe-2 dc current gain i c = 20a ; v ce = 4v 10 f t current-gain?bandwidth product i c = 1a; v ce = 15v 8 mhz isc website www.iscsemi.cn
|
