1 www.irf.com junction size: rectangular 135 x 100 mils wafer size: 4" v rrm class: 1200 v passivation process: glassivated moat reference ir packaged part: 8ews..s series standard recovery diodes ir135dm12ccb major ratings and characteristics parameters units test conditions v fm maximum forward voltage 1.1 v t j = 25c, i f = 8 a v rrm reverse breakdown voltage 1200 v t j = 25c, i rrm = 100 a (1) mechanical characteristics nominal back metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) nominal front metal composition, thickness 100% al, (20 m) chip dimensions 135 x 100 mils (see drawing) wafer diameter 100 mm, with std. < 110 > flat wafer thickness 300 m, 10 m maximum width of sawing line 45 m reject ink dot size 0.25 mm diameter minimum ink dot location see drawing recommended storage environment storage in original container, in dessicated nitrogen, with no contamination bulletin i0122j rev. a 02/97 (1) nitrogen flow on die edge.
2 www.irf.com ir135dm12ccb ir 135 d m 12 c cb 1 2 3 1 - international rectifier device 2 - chip dimension in mils 3 - type of device: d = wire bondable standard recovery diode 4 - passivation process: m = glassivated moat 5 - voltage code: code x 100 = v rrm 6 - metallization: c = aluminium (anode) - silver (cathode) 7 - cb = probed uncut die (wafer in box) none = probed die in chip carrier 4 device code ordering information table 56 7 outline t able all dimensions are in microns (mils) bulletin i0122j rev. a 02/97
3 www.irf.com ir135dm12ccb top view n 735 basic cells wafer layout all dimensions are in millimeters bulletin i0122j rev. a 02/97
|
