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1 n- and p-channel v (d-s) mosfet feature s ? halogen-free ? tre nchfet ? power mosfet ? 100 % r g test ed ? 100 % uis tested applications ? backlight inverter for lcd display ? full bridge converter product s um mary v ds (v) r ds(on) ( : ) i d (a) a q g (t yp.) n-channel 30 0.024 at v gs = 10 v 6.7 5.3 0 .036 at v gs = 4 .5 v 6.2 p-chan nel - 30 0.024 at v gs = - 10 v - 7. 0 11.8 0.036 at v gs = - 4.5 v - 6 .2 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op vi ew 2 3 4 1 n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. based on t c = 25 c. b. surfa ce mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c /w. absolute maximum ratings t a = 25 c, unless otherwise noted p aramet e r s ymbol n-channel p-channel unit drain-source voltage v ds 30 - 30 v gate -source v oltage v gs 2 0 continuous d rain current (t j = 150 c) t c = 25 c i d 6.7 - 7.0 a t c = 70 c 5.4 - 5.7 t a = 25 c 5.6 b, c - 5.7 b, c t a = 70 c 4.4 b, c - 4.7 b, c pulsed dr ai n current i dm 20 - 20 source-drain curre nt diode current t c = 25 c i s 2.5 - 2.5 t a = 25 c 1.6 b, c - 1.6 b, c pulsed source-dr ain current i sm 20 - 20 single pulse av alanche current l = 0 1 mh i as 7- 1 0 single pulse av alanche energ y e as 2.45 5 mj max i mum power dissipation t c = 25 c p d 3.0 3.1 w t c = 70 c 1.9 2 t a = 25 c 2.0 b, c 2.0 b, c t a = 70 c 1.25 b, c 1.25 b, c ope rating junction and storage temperature range t j , t st g - 55 to 1 50 c thermal resistance rat ings p arameter symbol n- ch annel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t d 10 s r th ja 54 64 49 62.5 c/w maximum junction-to-foot (drain) steady state r thj f 33 42 30 40 rohs compliant zzzglqwhnms '7 0
2 specifications t j = 25 c , unless otherwise noted pa ram e ter symb ol test conditions min. typ. a max. u n it static drain-source breakdo wn voltage v ds v gs = 0 v, i d = 250 a n- ch 30 v v gs = 0 v, i d = - 250 a p-ch - 30 v ds temper ature coefficient ' v ds /t j i d = 250 a n- ch 44 mv/c i d = - 250 a p-ch - 4 2 v gs(t h) temper ature coefficient ' v gs(t h) /t j i d = 250 a n- ch - 5.5 ii d = - 250 a p-ch 4.6 gate t h reshold voltage v gs(t h) v ds = v gs , i d = 2 50 a n- ch 1.4 3.0 v v ds = v gs , i d = - 250 a p-ch - 1.2 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v n-ch 100 na p-ch - 100 z ero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v n-ch 1 a v ds = - 30 v , v gs = 0 v p-ch - 1 v ds = 30 v , v gs = 0 v , t j = 55 c n- ch 10 v ds = - 30 v, v gs = 0 v, t j = 55 c p-ch - 10 on-state dr ain current b i d(on ) v ds = 5 v , v gs = 10 v n- ch 10 a v ds = - 5 v, v gs = - 10 v p-ch - 10 drain-source on-state re sistance b r ds(o n ) v gs = 10 v , i d = 5 a n-ch 0.0195 0.024 : v gs = - 10 v, i d = - 5 a p-ch 0.017 0.024 v gs = 4.5 v, i d = 4 a n-ch 0.0255 0.036 v gs = - 4.5 v, i d = - 4 a p-ch 0.024 0.036 forward t r ansconductance b g fs v ds = 15 v , i d = 5 a n- ch 22 s v ds = - 15 v , i d = - 5 a p-ch 24 dy namic a input capacita n ce c iss n- chan nel v ds = 20 v , v gs = 0 v , f = 1 mhz p-c hannel v ds = - 20 v , v gs = 0 v, f = 1 mhz n- ch 640 pf p-ch 990 output capacitance c oss n-ch 73 p-ch 140 re v erse transfer capacitance c rss n-ch 41 p-ch 99 t o tal gate charge q g v ds = 20 v, v gs = 10 v, i d = 5 a n-ch 11.7 20 nc v ds = - 20 v, v gs = - 10 v, i d = - 5 a p-ch 29 39 n-channel v ds = 20 v, v gs = 4.5 v i d = 5 a p-channel v ds = - 20 v, v gs = - 4.5 v , i d = - 5 a n- ch 5.3 9 p-ch 11.8 28 gate-source charge q gs n-ch 1.9 p-ch 3.8 gate- dr ain charge q gd n- ch 1.7 p-ch 5.6 gate resi sta nce r g f = 1 mhz n-ch 0.5 2.2 4.5 : p-ch 1.5 5.5 17 zzzglqwhnms '7 0
3 notes: a. guara nteed by design, not su bject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 % . stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted pa ramet e r sym bo l t est conditions min. typ. a max. u n it dyna mic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 4 i d ? 5 a, v gen = 10 v, r g = 1 p-channel v dd = - 20 v, r l = 4 i d ? - 5 a, v gen = - 10 v , r g = 1 n-ch 7 1 4 ns p-ch 7 16 rise time t r n-ch 10 20 p-ch 12 26 turn-off delay time t d(off) n-ch 15 30 p-ch 30 61 fall time t f n-ch 9 1 8 p-ch 9 19 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 4 i d ? 5 a, v gen = 4.5 v , r g = 1 p-channel v dd = - 20 v , r l = 4 i d ? - 5 a, v gen = - 4.5 v, r g = 1 n-ch 16 30 p-ch 44 83 rise time t r n-ch 17 30 p-ch 33 55 turn-off delay time t d(off) n-ch 16 30 p-ch 28 61 fall time t f n-ch 10 20 p-ch 13 26 drain- sou rce body diode characteristics continuous source-drain diode current i s t c = 25 c n-c h 2. 5 a p-ch - 2.5 pulse diode forward current a i sm n-c h 20 p-ch - 20 body dio de v oltage v sd i s = 1.6 a n-ch 0.78 1. 2 v i s = - 1.6 a p-ch - 0.76 - 1.2 body diode rev erse recovery time t rr n-channel i f = 2 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 2 a, di/dt = - 100 a/s, t j = 25 c n-c h 19 30 ns p-ch 26 50 body diode reverse recovery charge q rr n-c h 14 25 nc p-ch 18 .5 35 re v erse recovery fall time t a n-ch 13 ns p-ch 12.5 rev erse recovery rise time t b n-c h 6 p-ch 13 .5 www.din-tek.jp dt m4 6 16
4 n-c han nel typic a l c har acteristics 25 c, unless otherwise noted output characteristics on-r esistan ce vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 5 v 3 v 4 v 0.020 0.02 8 0.036 0.044 0.052 0.060 06121 8 24 30 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =10 v 0 2 4 6 8 10 0.0 2.5 5.0 7 .5 10.0 12.5 i d =5a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =1 0 v v ds =20 v v ds =30 v transfer characteristics capacitance on-resistance v s. jun ction temperature 0 1 2 3 4 5 01 2345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c =25 c t c = - 55 c t c = 125 c c rss 0 160 320 4 8 0 640 8 00 0 6 12 1 8 24 30 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =5a v gs =10 v v gs =4.5 v www.din-tek.jp dt m4 6 16
5 n - c h an n el typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to -source voltage single pulse power, junction-to-ambient 0 0.04 0.0 8 0.12 0.16 0.20 0 246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 125 c i d =5a 0 32 4 8 64 8 0 01 1 10 0 . 00 . 0 1 time (s) po w er ( w ) 0.1 16 safe operating area, junctio n -to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 1ms - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse dc 1s 10 s limited b yr ds(on) * 10 ms 100 ms www.din-tek.jp dt m4 6 16
6 n-c han nel typic a l c har acteristics 25 c, unless otherwise noted * the po we r dissipation p d is based on t j(max) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 5 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) 4 power derating , ju nction-to-foot 0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power dera ti ng, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w ) www.din-tek.jp dt m4 6 16
7 n - c h an n el typical characteristics 25 c, unless otherwise noted normalized th ermal t ransient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal i mpedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =120 c/ w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. s u rfa ce mo u nted d u ty cycl e = 0.5 normalized t hermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0 . 5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal i mpedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m4 6 16
8 p- ch annel ty pi cal cha r acteristics 25 c, unless otherwise noted outpu t characteristics on-resistan ce vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1 .5 2.0 2.5 v gs =1 0thr u 5 v v gs =4 v v gs =3 v v ds - drain-to- so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 6 12 1 8 24 30 v gs =4 .5 v v gs =1 0 v - on -resistance ( ) r ds( on) i d - drain c u rrent (a) 0 2 4 6 8 10 0.0 5.1 10.2 15.3 20.4 25.5 v ds =3 0 v i d =7a v ds =1 0 v v ds =2 0 v - gate -to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs t ransfer c haracteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 01 2345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to -so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 320 640 960 12 8 0 1600 0.0 2.4 4. 8 7.2 9.6 12.0 c is s c oss v ds - drain-to- so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 i d =7a v gs =4 .5 v v gs =1 0 v t j -j u nction temperat u re (c) ( n ormalized) - on -resistance r ds( on) www.din-tek.jp dt m4 6 16
9 p-channe l typical characteristics 25 c , unless otherwise noted so urce-drain diode forw ard voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -s o u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1 ma v ariance ( v ) v gs( th) t j - temperat u re (c) on -res istan ce vs. gate-to - sou rce voltage single pulse power, junction-to-ambient 0.00 0.04 0.0 8 0.12 0.16 0.20 012 34567 8 910 t j = 25 c t j = 125 c i d =7a - on -resistance ( ) r ds( on) v gs - gate-to -so u rce v oltage ( v ) 0 10 20 30 40 50 0 1 1 100. 00 . 0 1 0.1 time (s) po w er ( w ) s afe operating area, junctio n-to-ambient 100 1 0 01 0 1 1 10.0 0.01 10 0.1 0.1 1m s t c = 25 c single p u lse 10 ms 100 ms dc 1s li mited b yr ds (on) * 10 s v ds - drain-to- so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d www.din-tek.jp dt m4 6 16
10 p- ch annel ty pi cal cha r acteristics 25 c, unless otherwise noted * the po wer dissipation p d is based on t j(max) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 2.4 3. 8 5.2 6.6 8.0 0 2 55075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) po wer derating , junction-to-foot 0.0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) po wer dera ting, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 2 55075 100125150 t a -a m b ient temperat u re (c) po w er ( w ) www.din-tek.jp dt m4 6 16
11 p-channe l typical characteristics 25 c , unless otherwise noted normalized th ermal t ransient impedance, junction-to-ambient 0.2 0.1 0.05 0.02 single p u ls e t 1 t 2 n otes: p dm 1. d u ty cyc le, d = 2. per unit base = r thja =120 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfac e mo u nted d u ty cycle = 0.5 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.1 0.01 1 normalized t hermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalize d effecti v e transient thermal impedance 1 0.1 0.01 www.din-tek.jp dt m4 6 16
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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