advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 14m low drive current i d 45a surface mount package description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =125 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.6 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 48 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.38 continuous drain current, v gs @ 4.5v 20 pulsed drain current 1 140 gate-source voltage continuous drain current, v gs @ 4.5v 45 parameter rating drain-source voltage 20 pb free plating product 2001027031 ap9918gh/j the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 12 g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance v gs =4.5v, i d =18a - - 14 m v gs =2.5v, i d =9a - - 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =18a - 26 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =20v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =18a - 19 - nc q gs gate-source charge v ds =20v - 1.5 - nc q gd gate-drain ("miller") charge v gs =5v - 10.5 - nc t d(on) turn-on delay time 2 v ds =10v - 7.5 - ns t r rise time i d =18a - 83 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 18 - ns t f fall time r d =0.56 -23- ns c iss input capacitance v gs =0v - 500 - pf c oss output capacitance v ds =20v - 310 - pf c rss reverse transfer capacitance f=1.0mhz - 125 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 45 a i sm pulsed source current ( body diode ) 1 - - 140 a v sd forward on voltage 2 t j =25 , i s =45a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. ap9918gh/j 12v 100
ap9918gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 0 40 80 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v v g =2.5v v g =3.0v v g =4.5v v g =3.5v 0 20 40 60 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v v g =2.5v v g =3.5v v g =4.5v v g =3.0v 10 12 14 16 18 20 22 24 26 123456 v gs (v) r ds(on) (m ) i d =18a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =18a
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance ap9918gh/j 0 10 20 30 40 50 60 0 50 100 150 t c , case temperature ( o c) p d (w) 1 10 100 1000 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 10us 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a)
ap9918gh/j fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =15v v ds =20v v ds =10v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 junction temperature ( o c ) v gs(th) (v) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd (v) i f (a) t j =25 o c t j =150 o c 10 100 1000 10000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss
ap9918gh/j fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 5 v d g s v ds v gs r g r d rated v ds to the oscilloscope - + d g s v ds v gs i d i g
|
