? semiconductor components industries, llc, 2013 january, 2013 ? rev. 1 1 publication order number: ngtb50n60flw/d NGTB50N60FLWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? low saturation voltage using trench with field stop technology ? low switching loss reduces system power dissipation ? soft fast reverse recovery diode ? optimized for high speed switching ? 5 s short ? circuit capability ? these are pb ? free devices typical applications ? solar inverters ? uninterruptible power supplies (ups) absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 100 50 a diode forward current @ t c = 25 c @ t c = 100 c i f 100 50 a diode pulsed current t pulse limited by t j max i fm 200 a pulsed collector current, t pulse limited by t jmax i cm 200 a short ? circuit withstand time v ge = 15 v, v ce = 300 v, t j +150 c t sc 5 s gate ? emitter voltage v ge 20 v v transient gate ? emitter voltage (t pulse = 5 s, d < 0.10) 30 power dissipation @ t c = 25 c @ t c = 100 c p d 223 89 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 50 a, 600 v v cesat = 1.65 v e off = 0.6 mj e device package shipping ordering information NGTB50N60FLWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 50n60fl aywwg g e c
NGTB50N60FLWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.56 c/w thermal resistance junction ? to ? case, for diode r jc 0.74 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 50 a v ge = 15 v, i c = 50 a, t j = 150 c v cesat 1.40 ? 1.65 1.85 1.90 ? v gate ? emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.5 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7500 ? pf output capacitance c oes ? 300 ? reverse transfer capacitance c res ? 190 ? gate charge total v ce = 480 v, i c = 50 a, v ge = 15 v q g ? 310 ? nc gate to emitter charge q ge ? 60 ? gate to collector charge q gc ? 150 ? switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 116 ? ns rise time t r ? 43 ? turn ? off delay time t d(off) ? 292 ? fall time t f ? 78 ? turn ? on switching loss e on ? 1.1 ? mj turn ? off switching loss e off ? 0.6 ? total switching loss e ts ? 1.7 ? turn ? on delay time t j = 150 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 110 ? ns rise time t r ? 45 ? turn ? off delay time t d(off) ? 300 ? fall time t f ? 105 ? turn ? on switching loss e on ? 1.4 ? mj turn ? off switching loss e off ? 1.1 ? total switching loss e ts ? 2.5 ? diode characteristic forward voltage v ge = 0 v, i f = 50 a v ge = 0 v, i f = 50 a, t j = 150 c v f 1.55 ? 1.85 1.85 2.1 ? v reverse recovery time t j = 25 c i f = 50 a, v r = 200 v di f /dt = 200 a/ s t rr ? 85 ? ns reverse recovery charge q rr ? 0.40 ? c reverse recovery current i rrm ? 8 ? a
NGTB50N60FLWG http://onsemi.com 3 typical characteristics 250 200 150 100 50 0 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 1. output characteristics 300 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 2. output characteristics 250 200 150 100 50 0 v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v t j = 25 c t j = 150 c v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v 250 200 150 100 50 0 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 3. output characteristics t j = ? 55 c v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v 200 048 16 12 v ge , gate ? emitter voltage (v) i c , collector current (a) figure 4. typical transfer characteristics 180 160 140 120 100 80 60 40 20 0 t j = 25 c t j = 150 c 3.00 ? 75 ? 25 25 175 125 75 t j , junction temperature ( c) v ce , collector ? emitter voltage (v) figure 5. v ce(sat) vs. t j 2.50 2.00 1.50 1.00 0.50 0.00 i c = 100 a i c = 50 a i c = 25 a i c = 5 a 100000 0 10 20 100 90 v ce , collector ? emitter voltage (v) capacitance (pf) figure 6. typical capacitance 10000 1000 100 10 80 30 40 70 60 50 c ies c oes c res
NGTB50N60FLWG http://onsemi.com 4 typical characteristics 120 0 v f , forward voltage (v) i f , forward current (a) figure 7. diode forward characteristics 100 80 60 40 20 0 0.5 1 1.5 2 2.5 3 3.5 t j = 25 c t j = 150 c 20 0 q g , gate charge (nc) v ge , gate ? emitter voltage (v) figure 8. typical gate charge 50 100 150 200 250 300 350 15 10 5 0 v ce = 480 v 1.6 0 t j , junction temperature ( c) switching loss (mj) figure 9. switching loss vs. temperature 20 40 60 100 120 140 160 1.4 1.2 1 0.8 0.6 0.4 0.2 0 80 e on e off v ce = 400 v v ge = 15 v i c = 50 a r g = 10 v ce = 400 v v ge = 15 v i c = 50 a r g = 10 1000 0 t j , junction temperature ( c) switching time (ns) figure 10. switching time vs. temperature 20 40 60 100 120 140 160 80 100 10 1 t d(off) t d(on) t f t r 4.5 8 i c , collector current (a) switching loss (mj) figure 11. switching loss vs. i c 20 32 44 68 80 92 104 56 4 3.5 3 2.5 2 1.5 1 0.5 0 v ce = 400 v v ge = 15 v t j = 150 c r g = 10 e on e off 8 203244 688092104 56 1000 i c , collector current (a) switching time (ns) figure 12. switching time vs. i c 100 10 1 t d(off) t d(on) t f t r v ce = 400 v v ge = 15 v t j = 150 c r g = 10
NGTB50N60FLWG http://onsemi.com 5 typical characteristics 7 5 r g , gate resistor ( ) switching loss (mj) figure 13. switching loss vs. r g 15 25 35 55 65 75 85 45 v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c e on e off 6 5 4 3 2 1 0 10000 5 r g , gate resistor ( ) switching time (ns) figure 14. switching time vs. r g 15 25 35 55 65 75 85 45 1000 100 10 1 t d(off) t d(on) t f t r v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c 3 175 v ce , collector ? emitter voltage (v) switching loss (mj) figure 15. switching loss vs. v ce 225 275 325 425 475 525 575 375 2.4 1.8 1.2 0.6 0 e on e off v ge = 15 v i c = 50 a r g = 10 t j = 150 c 1000 175 v ce , collector ? emitter voltage (v) switching time (ns) figure 16. switching time vs. v ce 225 275 325 425 475 525 575 375 100 10 1 v ge = 15 v i c = 50 a r g = 10 t j = 150 c t d(off) t d(on) t f t r 1000 1 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 17. safe operating area 10 100 1000 100 10 1 0.1 0.01 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c
NGTB50N60FLWG http://onsemi.com 6 typical characteristics figure 19. collector current vs. switching frequency 0.01 0.1 1 10 100 1000 250 200 150 100 50 0 frequency (khz) ipk (a) 80 c 110 c 80 c 110 c v ce = 400 v, tj 150 c r gate = 10 w, v ge = 0/15 v, t case = 80 or 110 c (as noted), d = 0.5 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.56 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 5.48e ? 5 0.002 0.03 0.1 r i ( c/w) 0.02087 0.05041 0.07919 0.11425 0.19393 figure 20. igbt transient thermal impedance r(t) ( c/w) figure 21. diode transient thermal impedance pulse time (sec) r(t) ( c/w) pulse time (sec) 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.74 junction c 1 c 2 r 1 r 2 c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 2.0 0.09951 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 i (sec) 4.89e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.07958 0.13798 0.18744 0.23523 0.09951
NGTB50N60FLWG http://onsemi.com 7 figure 22. test circuit for switching characteristics
NGTB50N60FLWG http://onsemi.com 8 figure 23. definition of turn on waveform
NGTB50N60FLWG http://onsemi.com 9 figure 24. definition of turn off waveform
NGTB50N60FLWG http://onsemi.com 10 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb50n60flw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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