the is a modular amplifier designed to meet the ultralinear transmitter output requirements of worldwide wireless base station systems. the amplifier exhibits an extremely high ip3 (+48 dbm). the device is self contained with all matching and bias circuitry included. t ypical applications for this device include driver stages for single channel and multicarrier feed forward linear amplifiers. it is also useful for a lower power micro-cell amplifier output stage where excellent multitone intermodulation performance is required. some applications for this device are: cdma, tdma, gsm, gprs, edge, cdma2000 ULA-818-82 ultra linear amplifier 800 to 1000 mhz specifications ! -72 dbc acpr @ pout = 12 dbm ! +48 dbm ip3 ! +28.5 dbm p1db ! 15.5 db gain ! +7.0v single dc supply ! surface mount package microwave t echnology, inc., 4268 solar w ay, fremont, ca 94538 tel: (510) 651-6700 fax: (510) 651-2208 web site: www .mwtinc.com e-mail: info@mwtinc.com ULA-818-82 symbol freq ssgp1db ip3 vswr gof gotidd oth unit mhz db dbmdbm db db/ oc ma oc/w max. 1000 " 0.5 450 typ. 15.5 +28.5+48.0 2.0:1 / 3.0:1 " 0.25 -0.012 380 26 min. 800 14.0 +45.0 parameter frequency range small signal gainp out at 1 db compression third-order intercept (1) input / output gain v ariation over freq. gain v ariation over temp. dc currentfet thermal resistance (2) (1) two tone tests at p out = +13 dbm/tone, centered at 900 mhz with 20 mhz separation (2) when calculating typical tch, use fet vds=6.3v , ids=380ma vdd= 7.0 v , zo= 50 s , t = + 25oc
o u t p u t p o w e r a t p 1 d b @ + 2 5 oc 3 0 2 9 f re q u e n c y ( m h z ) 2 7 2 8 p 1 ( d b m ) 1 1 0 0 1 0 0 0 9 0 0 8 0 0 7 0 0 t ypical performance microwave t echnology, inc., 4268 solar w ay, fremont, ca 94538 tel: (510) 651-6700 fax: (510) 651-2208 web site: www .mwtinc.com e-mail: info@mwtinc.com ULA-818-82 1 1 0 0 1 0 0 0 9 0 0 8 0 0 7 0 0 i p 3 * v s . f r e q u e n c y @ + 2 5 oc 5 1 4 9 4 7 4 5 f re q u e n c y ( m h z ) * t w o t o n e t e s t @ p o u t = 1 3 d b m /t o n e ; w it h 2 0 m h z s e p a ra ti o n i p 3 ( d b m ) 5 0 4 8 4 6 g a i n v s . f r e q u e n c y o v e r t e m p e r a t u r e 1 7 1 6 1 5 1 4 f re q u e n c y ( m h z ) g a i n ( d b ) 1 1 0 0 1 0 0 0 9 0 0 8 0 0 7 0 0 -20oc +25 oc +85 oc a p p l i c a t i o n c i r c u i t u l a - 8 1 8 - 8 2 o u t l i n e d r a w i n g r e t u r n l o s s v s . f r e q u e n c y @ + 2 5 oc 0 - 1 0 - 5 - 1 5 - 2 0 r e t u r n l o s s ( d b ) f re q u e n c y ( m h z ) o u tp u t in p u t 1 1 0 0 1 0 0 0 9 0 0 8 0 0 7 0 0 -12 -20 -30 -50 -40 -60 -70 -80 -90 -10 0 -1 12 ce nte r 8 86 .5 mh z 1.5 m hz / sp an 15 m hz a c p r * * @ p o u t = 1 2 d b m @ + 2 5 oc * * 3 g p p , t s 2 5 .4 1 1 , t e s t m o d e l 1 , 6 4 c h ., c h . b w = 3 .8 4 m h z ; c h . s p a c in g = 5 m h z bias v oltage 8.0v rf input power 500 mwcase operating temperature +85 oc storage t emperature -65oc to +125oc absolute maximum ratings
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