infrared led chip algaas/gaas 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.3 1.4 v if=20ma reverse voltag e 8 v ir=10ua f 1.54 g 1.62 h ( g1 ) 1.69 940 nm if=20ma 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. "min" of po is actually "avg min" 4. mechanical data (a) emission area ------------------------------ - 8mil x 8mil (b) bottom area ------------------------------ - 9mil x 9mil (c) bonding pad ------------------------------ - 110um (d) chip thickness ---------------------------------- 10mil (e) junction height ---------------------------------- 6.5mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. power OPA9423 v r v f symbol if=20ma mw p o wavelength ? p (d) substrate (c) (a) (b) (e)
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