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| savantic semiconductor product specification silicon npn power transistors 2N6360 description with to-3 package low collector saturation voltage high dc current gain excellent safe operating area applications designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 12 a i cm collector current-peak 24 a i b base current 4 a p d total power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6360 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdwon voltage i c =0.2a ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =6a ;i b =0.6a 1.4 v v cesat-2 collector-emitter saturation voltage i c =12a; i b =2.4a 4.0 v v be base-emitter on voltage i c =6a ; v ce =4v 2.2 v i ceo collector cut-off current v ce =100v; i b =0 2.0 ma i cex collector cut-off current v ce =120v; v be(off) =1.5v t c =150 2.0 10.0 ma i ebo emitter cut-off current v eb =7v; i c =0 5.0 ma h fe-1 dc current gain i c =6a ; v ce =4v 15 h fe-2 dc current gain i c =12a ; v ce =4v 5 f t transition freuqency i c =1a ; v ce =4v 0.2 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6360 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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