option. AO4709 and AO4709l are (meets rohs & sony 259 standard product AO4709 is pb-free dual p-channel enhancement mode field symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl steady-state 30 40 maximum junction-to-ambient a steady-state power dissipation 30 schottky reverse voltage continuous forward current a i f pulsed forward current b absolute maximum ratings t a =25c unless otherwise noted parameter mosfet schottky drain-source voltage -30 gate-source voltage 20 continuous drain current a i d -8 a -6.6 pulsed drain current b -40 4.4 a 3.2 30 p d 33 w 22 junction and storage temperature range -55 to 150 parameter: thermal characteristics mosfet typ max -55 to 150 c/w 54 21 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 24 75 maximum junction-to-lead c maximum junction-to-ambient a t 10s r ja 36 40 c/w maximum junction-to-ambient a steady-state 67 75 maximum junction-to-lead c steady-state 25 30 AO4709 features v ds (v) = -30v i d = -8a (v gs = - 10v) r ds(on) < 33m ? (v gs = - 10v) r ds(on) < 56m ? (v gs = - 4.5v) schottky v ds (v) = 30v,if = 3a, vf<0.5v@1a the AO4709 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non- synchronous dc-dc converters. specifications). AO4709l is a green product ordering g d s a k g s s a d/k d/k d/k d/k 1 2 3 4 8 7 6 5 soic-8 effect transistor with schottky diode general description electrically identical www.freescale.net.cn 1 / 5
AO4709 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 40 a 24.5 33 t j =125c 33 41 56 m ? g fs 14.5 s v sd -0.76 -1 v i s -4.2 a c iss 920 pf c oss 190 pf c rss 122 pf r g 3.6 ? q g (10v) 18.4 nc q g (4.5v) 9.3 nc q gs 2.7 nc q gd 4.9 nc t d(on) 7.1 ns t r 3.4 ns t d(off) 18.9 ns t f 8.4 ns t rr 21.5 ns q rr 12.5 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v body diode reverse recovery time body diode reverse recovery charge i f =-8a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-5a i s =-1a,v gs =0v v ds =-5v, i d =-8a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.8 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-8a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: sept 2005 www.freescale.net.cn 2 / 5
AO4709 p-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 0 10 20 30 40 50 60 70 80 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-7.5a 25c 125c i d =-7.5a -4.5v - 5 v www.freescale.net.cn 3 / 5
AO4709 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c , t a =25c v ds =-15v i d =-8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 5
ao4 709 typical electrical and thermal characteristics: schottky 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja = 40 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t p d www.freescale.net.cn 5 / 5
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