general description features (v gs = 10v) (v gs = 10v) (v gs = 4.5v) - rohs compliant 100% uis tested ! - halogen free 100% r g tested! symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14.2 17 42 60 r jc 1.2 1.5 i d = 80a r ds(on) < 3.7m ? t c =25c 2.5 33 t c =100c 40 210 pulsed drain current c continuous drain current g junction and storage temperature range -55 to 150 c thermal characteristics units maximum junction-to-ambient a t 10s c/w parameter r ja v v 20 gate-source voltage drain-source voltage 30 AON6718L n-channel enhancement mode field effect transistor maximum units parameter absolute maximum ratings t a =25c unless otherwise noted srfet tm AON6718L uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is ideally suited for use as a low side switch in cpu core power conversion. r ds(on) < 5m ? v ds (v) = 30v repetitive avalanche energy l=0.1mh c mj avalanche current c 15 continuous drain current 80 19 a a t a =25c i dsm a t a =70c i d 80 63 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 83 1.6 t a =25c maximum junction-to-case steady-state c/w steady-state c/w maximum junction-to-ambient a d srfet tm g d s srfet tm s oft r ecovery mos fet : integrated schottky diode dfn5x6 fits soic8 footprint ! top view g s s s d d d d alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.025 0.1 t j =125c 20 i gss 0.1 ? ? q g (10v) 48 60 72 nc q g (4.5v) 20 25 30 nc q gs 12 15 18 nc q gd 61014nc t d(on) 9.2 ns t r 10.7 ns t d(off) 40 ns t f 12.5 ns t rr 10 13 16 ns q rr 21 26.5 32 nc rev0: oct-08 components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge m ? i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss ma v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 120 012345 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 1 3 5 7 9 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 120 140 160 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 4v 10v 3.5v 10v 4.5v 5v alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 102030405060 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 80 160 240 320 400 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =15v i d =20a single pulse t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 jc .r jc r jc =1.5c/w alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 120 140 160 180 200 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =60c/w alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L typical electrical and thermal characteristics 26 28 30 32 34 36 38 0 5 10 15 20 25 30 i s (a) figure 19: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 14 i rm (a) di/dt=800a/ s 125oc 125oc 25oc 25oc q rr i rm 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 di/dt (a/ s) figure 21: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 2 4 6 8 10 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 i s (a) figure 20: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/ s 125oc 125oc 25oc 25oc t rr s 0 3 6 9 12 15 18 21 24 0 200 400 600 800 1000 di/dt (a/ s) figure 22: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 s 125oc 25oc 25oc 125o i s =20a t rr s 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) v ds =15v v ds =30 v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) i s =1a 10 a 20 a 5a alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
AON6718L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com free datasheet http:///
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