advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 40v simple drive requirement r ds(on) 7m fast switching characteristic i d 75a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 200812012 1 total power dissipation thermal data parameter linear derating factor 0.7 storage temperature range operating junction temperature range continuous drain current 57 pulsed drain current 1 300 -55 to 150 -55 to 150 89 gate-source voltage + 20 continuous drain current 3 75 parameter rating drain-source voltage 40 ap9468gh/j-hf halogen-free product g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9468gj) are available for low-profile applications. g d s to-251(j) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =250ua - 0.01 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 7 m ? ? ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 ap9468gh/j-hf 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 5.0v 4.5 v v g =3.0v 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 3.0 v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4.0 5.0 6.0 7.0 8.0 020406080 i d , drain current (a) r ds(on) (m ? ) v gs =10v 4 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c v gs =4.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap9468gh/j-hf 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =20v v ds =25v v ds =30v 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 40 80 120 160 200 240 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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