2SC536 transistor (npn) features power dissipation p cm : 400 mw (tamb=25 ) collector current i cm : 100 ma collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic=1ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =35v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a dc current gain h fe v ce =6v, i c =1ma 60 960 collector-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.5 v transition frequency f t v ce =6v, i c =1ma 100 mhz collector output capacitance cob v ce =6v, f=1mhz 3.5 pf classification of h fe rank d e f g h range 60-120 100-200 160-320 280-560 480-960 1 2 3 to-92 1. emitter 2. collector 3. base 2SC536 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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