1 ao s semiconductor product reliability report AOZ8904CIL , rev a plasti c encapsulate d device alph a & omeg a semiconductor , inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOZ8904CIL. review of the electrical test results confirm that AOZ8904CIL passes aos quality and reliability requirements for product release. the continuous qualification testing and reliabili ty monitoring program ensure that all outgoing products will continue to meet aos quality and reliability standards. table of contents: i. product description ii. package and die information iii. qualification test requirements iv. qualification tests result v. reliability evaluation i. product description: the aoz8904 is a transient voltage suppressor array designed to protect high speed data lines from ele ctro static discharge (esd) and lightning. -rohs compliant -halogen free detailed information refers to the datasheet on web site. . ii. package and die information: product id AOZ8904CIL packag e type s ot23 _ 6l l ead frame c u , die attach material epoxy b on d wire c u wire msl level up to level 1
3 iii. qualification tests result: test item test condition test duration sample size result standard pre- conditioning 168hrs @85 c /85%rh+3 cyc reflow@260c - 5 lots (sum of tc,pct and hast) p ass jesd22 - a113 htrb vdd= 80% v br max. temp = 150c 168hrs 500hrs 1000hrs 15 lots (77 /lot) p ass jesd22 - a108 temperature cycle ' - 65 c to +150 c, air to air 500cycles 5 lots (77 /lot) p ass jesd22 - a110 pressure pot 121 c, 29.7psi , rh= 100% 96hrs 5 lots (77 /lot) p ass jesd22 - a102 hast ' 130 +/ - 2 c, 85%rh, 33.3 psi, at vcc min power dissipation. 100hrs 5lots (55 /lot) p ass jesd22 - a104 iv. reliability evaluation fit rate (per billion): 6 mttf = 18589 years the presentation of fit rate for the individual produ ct reliability is restricted by the actual htrb sample siz e of the selected product. failure rate determination is based on jedec standard jesd 85. fit means one failure per billion device hours. failure rate = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.83 x 10 9 / [ 2x (15x77x500) x258 ] = 6 mttf = 10 9 / fit = 1.63 x10 8 hrs= 18589 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from htrb tests h = duration of htrb testing af = acceleration factor from test to use conditions (e a = 0.7ev and tuse = 55c) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s)] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 258 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltzmanns constant, 8.617164 x 10 -5 ev / k
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