?200 9 fairchild semiconductor corporation isl9v2540s3s t rev. a1 www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt isl9v2540s3s t ecospark n-channel ignition igbt 250mj , 400v features ! scis energy = 250mj at t j = 25 o c ! logic level gate drive applications ! automotive ignition coil driver circuits ! coil - on plug applications general description the isl9v2540s3s t is a next generation ignition igbt that offers outstanding scis capability in the industry standard d2-pak (to-263) plastic package. this device is intended for use in automotive ignition circuits, specifically as a coil driver. internal diodes provide voltage clamping without the need for external components. devices can be custom made to specific clamp voltages. contact your nearest fairchild sales office for more information. package gate collector emitter r 2 r 1 symbol jedec to-263ab gate emitter collector (flange) d 2 -pak november 2009 ? ecospark ? ! qualified to aec q101 ! rohs compliant
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt device maximum ratings t a = 25 c unless otherwise noted package marking and ordering information electrical characteristics t a = 25 c unless otherwise noted off state characteristics on state characteristics symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1 ma) 430 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis25 at starting t j = 25 c, i scis = 12.9a, l = 3.0mhy 250 mj e scis150 at starting t j = 150 c, i scis = 10a, l = 3.0mhy 150 mj i c25 collector current continuous, at t c = 25 c, see fig 9 15.5 a i c110 collector current continuous, at t c = 110 c, see fig 9 15.3 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25 c 166.7 w power dissipation derating t c > 25 c1 . 1 1 w / c t j operating junction temperature range -40 to 175 c t stg storage junction temperature range -40 to 175 c t l max lead temp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead temp for soldering (package body for 10s) 260 c esd electrostatic discharge voltage at 100pf, 1500 ? ( hbm) 4 kv device marking device package reel size tape width quantity v2540s isl9v2540s3st to-263ab 330mm 24mm 800 units symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i c = 2ma, v ge = 0, r g = 1k ?, see fig. 15 t j = -40 to 150 c 370 400 430 v bv ces collector to emitter breakdown voltage i c = 10ma, v ge = 0, r g = 0 , see fig. 15 t j = -40 to 150 c 390 420 450 v bv ecs emitter to collector breakdown voltage i c = -75ma, v ge = 0v, t c = 25 c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i cer collector to emitter leakage current v cer = 250v, r g = 1k ?, see fig. 11 t c = 25 c- - 25 a t c = 150 c- - 1 ma i ecs emitter to collector leakage current v ec = 24v, see fig. 11 t c = 25 c- - 1 ma t c = 150 c- - 40 ma r 1 series gate resistance - 70 - ? r 2 gate to emitter resistance 10k - 26k ? v ce(sat) collector to emitter saturation voltage i c = 6a, v ge = 4v t c = 25 c, see fig. 3 -1.371.8v v ce(sat) collector to emitter saturation voltage i c = 10a, v ge = 4.5v t c = 150 c see fig. 4 -1.772.2v
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt dynamic characteristics switching characteristics thermal characteristics q g(on) gate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 - 15.1 - nc v ge(th) gate to emitter threshold voltage i c = 1.0ma, v ce = v ge, see fig. 10 t c = 25 c1.3 - 2.2 v t c = 150 c0.75 - 1.8 v v gep gate to emitter plateau voltage i c = 10a, v ce = 12v -3.1- v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ?, v ge = 5v, r g = 1k ? t j = 25 c -0.61- s t riser current rise time-resistive - 2.17 - s t d(off)l current turn-off delay time-inductive v ce = 300v, l = 500hy , v ge = 5v, r g = 1k ? t j = 25 c, see fig. 12 -3.64- s t fl current fall time-inductive - 2.36 - s scis self clamped inductive switching t j = 25 c, l = 3.0mhy, r g = 1k ?, v ge = 5v, see fig. 1 & 2 - - 250 mj r jc thermal resistance junction-case to-263 - - 0.9 c/w
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt typical performance curves figure 1. self clamped inductive switching current vs time in clamp figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4. collector to emitter on-state voltage vs junction temperature figure 5. collector to emitter on-state voltage vs collector current figure 6. collector to emitter on-state voltage vs collector current 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 200 t clp , time in clamp (s) i scis , inductive switching current (a) r g = 1k ? , v ge = 5v,v dd = 14v t j = 25 c t j = 150 c scis curves valid for vclamp voltages of <430v 0 5 10 15 20 25 30 35 40 012345678910 i scis , inductive switching current (a) t j = 25 c t j = 150 c l, inductance (mhy) r g = 1k ? , v ge = 5v,v dd = 14v scis curves valid for v clamp voltages of <430v 1.25 1.30 1.35 1.40 1.45 1.50 1.55 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.5v v ge = 4.5v v ge = 5.0v v ge = 10.0v i ce = 6a 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( c) v ce , collector to emitter voltage (v) i ce = 10a v ge = 4.0v v ge = 3.5v v ge = 4.5v v ge = 5.0v v ge = 10.0v 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) t j = - 40 c v ge = 4.0v v ge = 3.5v v ge = 4.5v v ge = 5.0v v ge = 10.0v v ge = 3.0v 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ge = 4.0v v ge = 3.5v v ge = 4.5v v ge = 5.0v v ge = 10.0v t j = 25 c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) v ge = 3.0v
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt typical performance curves (continued) figure 7. collector to emitter on-state voltage vs collector current figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junction temperature 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) t j = 175 c v ge = 4.0v v ge = 3.5v v ge = 4.5v v ge = 5.0v v ge = 10.0v v ge = 3.0v 0 5 10 15 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 175 c t j = 25 c t j = -40 c 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175 i ce , dc collector current (a) t c , case temperature ( c) v ge = 4.0v 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 v ce = v ge v th , threshold voltage (v) t j junction temperature ( c) i ce = 1ma 0.1 1 10 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 leakage current (a) t j , junction temperature ( c) v ces = 250v v ecs = 24v v ces = 300v 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 t j , junction temperature ( c) switching time (s) i ce = 6.5a, v ge = 5v, r g = 1k ? resistive t off inductive t off resistive t on
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt typical performance curves (continued) figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. igbt normalized transient thermal impedance, junction to case 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 c, capacitance (pf) vce, collector to emitter voltage (v) coes cres cies frequency = 1 mhz 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g , gate charge (nc) v ge , gate to emitter voltage (v) i g(ref) = 1ma, r l = 1.25 ?, t j = 25 c v ce = 6v v ce = 12v 405 410 415 420 425 430 435 440 445 10 100 1000 5000 bv cer , breakdown voltage (v) r g , series gate resistance ( ? ) t j = - 40 c t j = 25 c t j = 175 c 10 -2 10 -1 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 z jc , normalized thermal response t 1 , rectangular pulse duration (s) duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c t 1 t 2 p d 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt test circuit and waveforms figure 17. inductive switching test circuit figure 18. t on and t off switching test circuit figure 19. unclamped energy test circuit figure 20. unclamped energy waveforms r g g c e v ce l pulse gen dut r g = 1k ? + - v ce dut 5v c g e load r or l t p v ge 0.01 ? l i as + - v ce v dd r g dut vary t p to obtain required peak i as 0v v dd v ce bv ces t p i as t av 0
?2009 fairchild semiconductor corporation isl9v2540s3s t rev a1. www.fairchildsemi.com isl9v2540s3s t n-channel ignition igbt spice thermal model rev 16 may 2005 isl9v2540s3s t ctherm1 th 6 19e -4 ctherm2 6 5 12e -3 ctherm3 5 4 15e -3 ctherm4 4 3 25e -3 ctherm5 3 2 69e -3 ctherm6 2 tl 100e -3 rtherm1 th 6 80e -3 rtherm2 6 5 81e -3 rtherm3 5 4 82e -3 rtherm4 4 3 100e -3 rtherm5 3 2 150e -3 rtherm6 2 tl 1645e -4 saber thermal model isl9v2540s3s t template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 19e -4 ctherm.ctherm2 6 5 = 12e -3 ctherm.ctherm3 5 4 = 15e -3 ctherm.ctherm4 4 3 = 25e -3 ctherm.ctherm5 3 2 = 69e -3 ctherm.ctherm6 2 tl = 100e -3 rtherm.rtherm1 th 6 = 80e -3 rtherm.rtherm2 6 5 = 81e -3 rtherm.rtherm3 5 4 = 82e -3 rtherm.rtherm4 4 3 = 100e -3 rtherm.rtherm5 3 2 = 150e -3 rtherm.rtherm6 2 tl = 1645e -4 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case
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supersot ? -3 supersot ? -6 supersot ? -8 supremos? syncfet? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts eit her directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairch ild's quality standards for handling and storage and pr ovide access to fair child's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropr iately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from u nauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design s pecifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specific ations. fairchild semiconductor rese rves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specificati ons on a product that is disconti nued by fairchild semiconductor. the datasheet is for reference information only. rev. i43 isl9v2540s3s t n-channel ignition igbt
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