issue 1 - june 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTN19055DZ 55v, sot89, npn medium power transistor summary bv cex > 150v bv ceo > 55v i c(cont) = 6a v ce(sat) < 60mv @ 1a r ce(sat) = 28m p d = 2.1w description packaged in the sot89 outline this low saturation 55v npn transistor offers extremely low on state losses making it ideal for use in dc-dc circuits and various driving and power management functions. feature ? extremely low equivalent on-resistance of 28m 6 amps continuous current up to 10 amps peak current very low saturation voltages excellent h fe characteristics up to 10 amps 150v forward blocking voltage applications emergency lighting circuits motor driving (including dc fans) solenoid, relay and actuator drivers dc modules backlight inverters ordering information device marking s75 device reel size (inches) tape width (mm) quantity per reel ZXTN19055DZta 7 12 1000 c e b c e pinout - top view c b
ZXTN19055DZ issue 1 - june 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on 50mm x 50mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. parameter symbol limit unit collector-base voltage v cbo 150 v collector-emitter voltage (f orward blocking voltage) v cex 150 v collector-emitter voltage (base open) v ceo 55 v emitter-base voltage v ebo 7v continuous collector current (b) i c 6a peak pulse current i cm 10 a power dissipation at t amb =25c (a) p d 1.5 w linear derating factor 12 mw/c power dissipation at t amb =25c (b) p d 2.1 w linear derating factor 16.8 mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 83 c/w junction to ambient (b) r ja 59 c/w
ZXTN19055DZ issue 1 - june 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTN19055DZ issue 1 - june 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 150 200 v i c = 100ma collector-emitter breakdown voltage (forward blocking) bv cex 150 200 v i c = 100ma, r be < 1k or -1v < v be < +0.25v collector-emitter breakdown voltage (base open) bv ceo 55 75 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo 7 8.1 v ie = 100ma collector-base cut-off current i cbo <1 50 na v cb = 120v 20 av cb = 120v, t amb = 100c collector-emitter cut-off current i cex <1 100 na v ce = 120v; r be < 1k or -1v < v be < 0.25v emitter cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 25 40 mv i c = 0.5a, i b = 50ma (*) 45 70 mv i c = 1a, i b = 50ma (*) 40 60 mv i c = 1a, i b = 100ma (*) 200 350 mv i c = 2a, i b = 20ma (*) 110 140 mv i c = 2a, i b = 40ma (*) 140 200 mv i c = 4a, i b = 200ma (*) 170 250 mv i c = 6a, i b = 600ma (*) base-emitter saturation voltage v be(sat) 800 900 mv i c = 2a, i b = 20ma (*) 1000 1150 mv i c = 6a, i b = 600ma (*) base-emitter turn-on voltage v be(on) 760 900 mv i c = 2a, v ce = 2v (*) 900 1050 mv i c = 6a, v ce = 2v (*) static forward current transfer ratio h fe 250 400 700 i c = 10ma, v ce = 2v (*) 250 400 i c = 1a, v ce = 2v (*) 180 300 i c = 2a, v ce = 2v (*) 30 50 i c = 6a, v ce = 2v (*) 20 i c = 10a, v ce = 2v (*) transition frequency f t 140 200 mhz i c = 100ma, v ce =10 v f = 50mhz output capacitance c obo 21.2 30 pf v cb = 10v, f = 1mhz delay time t d 13.8 v cc = 10v, i c = 1a, i b1 = i b2 = 100ma rise time t r 21.9 storage time t s 546 fall time t f 106
ZXTN19055DZ issue 1 - june 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTN19055DZ issue 1 - june 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot89 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e1 2.13 2.29 0.084 0.090 b 0.44 0.56 0.017 0.022 e 1.50 bsc 0.059 bsc b1 0.36 0.48 0.014 0.019 e1 3.00 bsc 0.118 bsc c 0.35 0.44 0.014 0.019 h 3.94 4.25 0.155 0.167 d 4.40 4.60 0.173 0.181 l 0.89 1.20 0.155 0.167 e 2.29 2.60 0.090 0.102 - - - - d1 d a c b1 l e h e1 b e e1
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