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reva www.irf.com 1 IRAMX30TP60A series 30a, 600v with open emitter pins description international rectifier's iramx30tp 60a is a 30a, 600v integrated power hybrid ic with open emitter pins for advanced appliance motor drives applications su ch as air conditioning systems and compressor drivers as well as in light industrial application. ir's techno logy offers an extremely compact, high performance ac motor-driver in a single isolated package to simplify design. this advanced hic is a combination of ir's low v ce (on) trench igbt technology and the industry benchmark 3 phase high voltage, high speed driver in a fully is olated thermally enhanced package. a built-in high precision temperature monitor and over-current protectio n feature, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of prot ection and fail-safe operation. using a single in line package (sip2) with full transfer mold structure and cti>600 minimizes pcb space and resolves isolation problems to heatsink. features x integrated gate drivers and bootstrap diodes x temperature monitor x protection shutdown pin x low v ce (on) trench igbt technology x undervoltage lockout for all channels x matched propagation delay for all channels x schmitt-triggered input logic x cross-conduction prevention logic x motor power range 1~2kw / 85~253 vac x isolation 2000v rms min and cti> 600 ? rohs compliant ? recognized by ul (file number: e252584) absolute maximum ratings v ces / v rrm igbt/ fw diode blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current at f pwm =6khz (note 1) 30 i o @ t c =100c rms phase current at f pwm =6khz (note 1) 15 i pk maximum peak phase current (note 2) 45 f p maximum pwm carrier frequency 20 khz p d maximum power dissipation per igbt @ t c =25c 41 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diode & ic) maximum operating junc tion temperature +150 t c operating case temperature range -20 to +100 t stg storage temperature range -40 to +125 t mounting torque range (m3 screw) 0.8 to 1.0 nm note 1: sinusoidal modulation at v + =400v, v cc =15v, t j =150c, mi=0.8, pf=0.6, see figure 3. note 2: t p <100ms, v cc =15v, t c =25c, f pwm =6khz. a c v integrated power hybrid ic for app liance motor drive a pp lications
IRAMX30TP60A 2 www.irf.com internal electrical sc hematic ? IRAMX30TP60A 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 vru (12) vrw (14) vrv (13) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) thermistor r 3 vdd (22) vss (23) r 1 r 2 c rg1 rg3 rg5 driver ic r t lo1 16 lo3 14 lo2 15 rg2 rg4 rg6 t/i trip (21) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) +
IRAMX30TP60A www.irf.com 3 absolute maximum ratings (continued) symbol parameter min max units conditions i bdf bootstrap diode peak forward current --- 1.0 a t p =10ms, t j =150c, t c =100c p br peak bootstrap resistor peak power (single pulse) --- 15.0 w t p =100 s, t c =100c esr series v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, t/itrip -0.3 7 v v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =5v, i c =250 a ?9 (br)ces ?7 temperature coeff. of breakdown voltage --- 0.3 --- v/c v in =5v, i c =1ma ( 25c - 150c ) --- 1.5 2 ic=12.5a, t j =25c --- 1.7 --- ic=12.5a, t j =150c --- 10 150 v in =5v, v + =600v --- 500 --- v in =5v, v + =600v, t j =150c -- 1.65 2.2 if=12.5a --- 1.55 --- if=12.5a, t j =150c --- 1.2 1.7 i f =1a --- 1.0 --- i f =1a, t j =125c r br bootstrap resistor value --- 22 --- ? t j =25c ?5 br /r br bootstrap resistor tolerance --- --- 5 % t j =25c v bdfm bootstrap diode forward voltage drop v v ce(on) collector-to-emitter saturation voltage v i ces ?$ v fm diode forward voltage drop v zero gate voltage collector current
IRAMX30TP60A 4 www.irf.com inverter section switching characteristics symbol parameter min typ max units conditions e on turn-on switching loss --- 585 --- e off turn-off switching loss --- 185 --- e tot total switching loss --- 770 --- e rec diode reverse recovery energy --- 20 --- t rr diode reverse recovery time --- 130 --- ns e on turn-on switching loss --- 780 --- e off turn-off switching loss --- 310 --- e tot total switching loss --- 1090 --- e rec diode reverse recovery energy --- 25 --- t rr diode reverse recovery time --- 125 --- ns q g turn-on igbt gate charge --- 50 75 nc i c =24a, v + =400v, v ge =15v rbsoa reverse bias safe operating area t j =150c, i c =12.5a, v p =600v v + = 450v, v cc =+15v to 0v see ct3 scsoa short circuit safe operating area 5 --- --- s t j =25c, v + = 400v, v ge =+15v to 0v full square v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. j i c =12.5a, v + =400v v cc =15v, l=1.2mh energy losses include "tail" and diode reverse recovery see ct1 j i c =12.5a, v + =400v v cc =15v, l=1.2mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 recommended operating conditions driver function symbol definition min typ max units v b1,2,3 high side floating supply voltage v s +12.5 v s +15 v s +17.5 v v s1,2,3 high side floating supply offset voltage note 4 --- 450 v v cc low side and logic fixed supply voltage 13.5 15 16.5 v v t/itrip t/i trip input voltage v ss --- v ss +5 v v in logic input voltage lin, hin v ss --- v ss +5 v hin high side pwm pulse width 1 --- --- s deadtime external dead time between hin and lin 1 --- --- s note 3: for more details, see ir21365 data sheet note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (please refer to dt97-3 for more details) the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential ( note 3 )
IRAMX30TP60A www.irf.com 5 static electrical characteristics driver function symbol definition min typ max units v in,th+ positive going input threshold for lin, hin 3.0 --- --- v v in,th- negative going input threshold for lin, hin --- --- 0.8 v v ccuv+, v bsuv+ v cc /v bs supply undervoltage, positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc /v bs supply undervoltage, negative going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v i qbs quiescent v bs supply current --- --- 120 a i qcc quiescent v cc supply current --- --- 2.3 ma i lk offset supply leakage current --- --- 50 a i in+ input bias current (out=lo) --- 100 220 a i in- input bias current (out=hi) -1 200 300 a v(t/i trip )i trip threshold voltage 3.85 4.3 4.75 v v(t/i trip, hys) i trip input hysteresis --- 0.15 --- v v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. the v in and i in parameters are referenced to com and are applicable to all six channels. (note 3) dynamic electrical characteristics symbol parameter min typ max units conditions t on input to output propagation turn-on delay time (see fig.11) --- 650 --- ns t off input to output propagation turn-off delay time (see fig. 11) --- 700 --- ns t filin input filter time (hin,lin) --- 200 --- s v in =0 or v in =5v t blt-itrip i trip blanking time --- 150 --- ns v in =0 or v in =5v, v itrip =5v t itrip i trip to six switch turn-off propagation delay (see fig. 2) --- --- 1.75 s i c =12.5a, v + =300v d t internal dead time injected by driver 220 290 360 ns v in =0 or v in =5v m t matching propagation delay time (on & off) all channels --- 40 75 ns external dead time> 400ns --- 7.7 --- t c = 25c --- 6.7 --- t c = 100c v bias (v cc , v bs1,2,3 )=15v, t j =25oc, unless otherwise specified. driver only timing unless otherwise specified. t flt-clr post i trip to six switch turn-off clear time (see fig. 2) ms i c =12.5a, v + =300v
IRAMX30TP60A 6 www.irf.com thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j-c) thermal resistance, per igbt --- 2.4 3.0 r th(j-c) thermal resistance, per diode --- 3.7 5.0 r th(c-s) thermal resistance, c-s --- 0.1 --- cti comparative tracking index 600 --- --- v bkcurve curvature of module backside 0 --- --- ?p convex only c/w inverter operating condition flat, greased surface. heatsink compound thermal conductivity 1w/mk internal ntc - thermistor characteristics parameter definition min typ max units conditions r 25 resistance 97 100 103 n? t c = 25c r 125 resistance 2.25 2.52 2.80 n? t c = 125c b b-constant (25-50c) 4165 4250 4335 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 --- 125 c typ. dissipation constant --- 1 --- mw/c t c = 25c r t resistance --- 12 --- n? t c =25c ?5 t /r t resistor tolerance --- --- 1 % t c =25c input-output logic level table i trip hin1,2,3 lin1,2,3 u,v,w 001v+ 0100 011off 000off 1xxoff ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2)
IRAMX30TP60A www.irf.com 7 t/i trip u,v,w lin1,2,3 hin1,2,3 figure1. input/output timing diagram t/i trip lin1,2,3 hin1,2,3 t flt-clr 50% 50% u,v,w 50% t t/itrip 50% figure 2. t/i trip timing waveform note 5: the shaded area indicates that both high-side and low-side swit ches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load.
IRAMX30TP60A 8 www.irf.com module pin-out description pin name description 1 v b3 high side floating supply voltage 3 2 u, v s3 output 3 - high side floating supply offset voltage 3nanone 4 v b2 high side floating supply voltage 2 5 v,v s2 output 2 - high side floating supply offset voltage 6nanone 7 v b1 high side floating supply voltage 1 8 w,v s1 output 1 - high side floating supply offset voltage 9nanone 10 v + positive bus input voltage 11 na none 12 l e1 low side emitter connection - phase 1 13 l e2 low side emitter connection - phase 2 14 l e3 low side emitter connection - phase 3 15 h in1 logic input high side gate driver - phase 1 16 h ni2 logic input high side gate driver - phase 2 17 h in3 logic input high side gate driver - phase 3 18 l in1 logic input low side gate driver - phase 1 19 l in2 logic input low side gate driver - phase 2 20 l in3 logic input low side gate driver - phase 3 21 t/i trip temperature monitor and shut-down pin 22 v cc +15v main supply 23 v ss negative main supply 1 23
IRAMX30TP60A www.irf.com 9 typical application connection IRAMX30TP60A 3-phase ac motor boot-strap capacitors w v u controller v+ dc bus capacitors phase leg current sense o/c sense (active low) current sensing can use a single sense resistor or phase leg sensing as shown cb v b3 v b2 v b 1 v s3 v s3 v s1 pgnd v cc (15 v) i trip v ss l e1 l e2 l e3 h in1 h in2 h in3 l in 1 l in2 l in3 temp sense o/c sense (active low) dgnd 23 IRAMX30TP60A 1 p 9df00 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ce ramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vcc- vss and vb1,2,3-vs1,2,3 te rminals, the capacitors shown connected between these terminals should be loca ted very close to the module pins. additional high frequency capacitors, typically 0.1 f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dt04-4, application note an -1044 or figure 10. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with th e vcc. (see maximum ratings table on page 3). 4. after approx. 8ms the fault is reset. (s ee dynamic characteristics table on page 5). 5. pwm generator must be disabled within fault dura tion to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation.
IRAMX30TP60A 10 www.irf.com 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 maxim um output phase rms current - a pwm sw itching fr e quency - k hz t c = 80o c t c = 90o c t c = 100o c figure 4. maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 2 4 6 8 10 12 14 16 18 1 10 100 maxim um output phase rms current - a modulation frequency - hz f pwm = 6khz f pwm = 10khz f pwm = 16khz figure 5. maximum sinusoidal phas e current vs. modulation frequency sinusoidal modulation, v + =400v, t j =150c, t c =100c, mi=0.8, pf=0.6
IRAMX30TP60A www.irf.com 11 0 50 100 150 200 250 300 02468101214161820 total pow er loss- w pwm sw itching fr e quency - k hz i out = 18a i out = 15a i out = 12a figure 6. total power losses vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 total pow er loss - w output phase current - a rms f pwm = 16khz f pwm = 10khz f pwm = 6khz figure 7. total power losses vs. output phase current sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz
IRAMX30TP60A 12 www.irf.com 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 max allow able case temperature - oc output phase current - a rms f pwm = 6khz f pwm = 10khz f pwm = 16khz figure 8. maximum allowable case temper ature vs. output rms current per phase sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 103 90 100 110 120 130 140 150 160 65 70 75 80 85 90 95 100 105 110 115 igbt junction temperature - c internal thermistor temperature equivalent read out - c t j avg = 1.33 x t therm + 14 figure 9. estimated maximum igbt junction temperature vs. thermistor temperature sinusoidal modulation, v+=400v, iphase=6arms , fsw=16khz, fmod=50hz, mi=0.8, pf=0.6
IRAMX30TP60A www.irf.com 13 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 thermistor pin read-out voltage - v thermistor temperature - c max avg min figure 10. thermistor readout vs. temperature (7.5kohm r ext pull-down resistor) and normal thermistor resistance values vs. temperature table. 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 0 5 10 15 20 recommended bootstrap capacitor - f pwm fr e que ncy - k hz f f f f 15 f figure 11. recommended bootstrap capa citor value vs. switching frequency
IRAMX30TP60A 14 www.irf.com figure 11. switching parameter definitions v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 10% v ce figure 11a. input to output propagation turn-on delay time. figure 11b. input to output propagation turn-off delay time. v ce i f h in /l in t rr i rr figure 11c. diode reverse recovery.
IRAMX30TP60A www.irf.com 15 ho lo u,v,w ic driver v + lin1,2,3 5v hin1,2,3 i n i o figure ct1. switching loss circuit ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o i n i o figure ct2. s.c.soa circuit ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o i n i o figure ct3. r.b.soa circuit
IRAMX30TP60A 16 www.irf.com package outline IRAMX30TP60A note1: unit tolerance is +0.5mm, fff unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in th is drawing differs from ffff font shown on module. note4: lot code marking. characters font in th is drawing differs from ffff font shown on module. note5: ?p? character denotes lead free. characters font in this drawing differs from font shown on module. >y >t>? d d d! IRAMX30TP60A p 4db00 missing pin : 3,6,9,11 note2 note4 note3 note5 dimensions in mm for mounting instruction see an-1049
IRAMX30TP60A www.irf.com 17 package outline IRAMX30TP60A-2 note1: unit tolerance is +0.5mm, fff unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from ffff font shown on module. note4: lot code marking. characters font in this drawing differs from ffff font shown on module. note5: ?p? character denotes lead free. characters font in this drawing differs from font shown on module. missing pin : 3,6,9,11 >y >t>? d d! d IRAMX30TP60A-2 >>>>>e>?>> note2 note4 note3 note5 dimensions in mm for mounting instruction see an-1049 data and specifications are su bject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 2013-07-29

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