1/5 XP202A0003MR-G p-channel 4v (g-s) mosfet product name package order unit XP202A0003MR-G sot-23 3,000/reel parmeter symbol ratings units drain-source voltage v dss -30 v gate-source voltage v gss 20 v drain current (dc) i d -3 a drain current(pulse) ( * 1) i dp -12 a channel power dissipation ( * 2) pd 1 w channel temperature tch +150 ? storage temperature tstg - 55 ~ +150 ? limits parameter symbol test conditions min. typ. max. units drain-source breakdown voltage v (br)dss i d =-1ma, v gs =0v -30 - - v drain-source cut-off current i dss v ds =-30v, v gs =0v - - -1 a gate-source leakage current i gss v gs =16v,vds=0v - - 10 a gate-source cut-off voltage v gs(off) v ds =-10v,id=-1ma -1.2 - -2.6 v forward transfer admittance |yfs| v ds =-10v,id=-3a - 8.0 - s r ds(on) 1 i d =-1.5a,vgs=-10v - 45 - m ? r ds(on) 2 i d =-1.0a,vgs=-4.5v - 67 - m ? drain-source on resistance r ds(on) 3 i d =-1.0a,vgs=-4v - 76 - m ? input capacity ciss v ds =-10v,f=1mhz - 435 - pf output capacity coss v ds =-10v,f=1mhz - 110 - pf feedback capacity crss v ds =-10v,f=1mhz - 85 - pf turn on delay time td(on) i d =-1a - 6 - ns rise time tr i d =-1a - 12 - ns turn off delay time td(off) i d =-1a - 28 - ns fall time tf i d =-1a - 10 - ns all gate charge amount qg v ds =-15v, v gs =-10v, i d =-3a - 10 - nc gate source charge amount qgs v ds =-15v, v gs =-10v, i d =-3a - 1.2 - nc gate drain charge amount qgd v ds =-15v, v gs =-10v, i d =-3a - 2.2 - nc diode forward voltage v sd i s =-3a, v gs =0v - -0.8 -1.2 v ? low on resistance ? ultra high speed switching ? 4v driving ? eu rohs compliant, pb free etr1128-003 ? ? switching features ? ? ? ? ? ? ? ? ? ? ? ? ? electrical characteristics applications ? ? ? ? ? ? ? ? a bsolute maximum ratings product name pin configuration ( * 1) pw ? 10 s,duty cycle ? 1% ( * 2) ceramic board (900mm2 0.8mm) mounting sot-23(top view 1. gate 2. source 3. drain * the ?-g? suffix indicates that the products are halogen and antimony free as well as being fully rohs compliant.
2/5 XP202A0003MR-G ? ? ? ? ? ? ? ? ? sot-23 ? ? ? marking rule ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? mark product series 6 xp202*******-g ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? mark ? ? product group product number a d 00 03 xp202a0003**-g equivalent circuit packaging information switching-time test circuit td(on) td(off) t r tf vi vo 0v 0v 10% 90% 90% 10% 90% 10% 50 rl vo vi oscilloscope oscilloscope s g d 12 3 ? represents product series ? ? represents product group and number ?| ? represents production lot number ? 01 to 09, 0a to 0z, 11 to 9z, a1 to a9, aa to z9, za to zz repeated (g, i, j, o, q, w excluded) product series
3/5 XP202A0003MR-G ? ? ? ? ? ? ? ? ? typical performance characteristics (1) drain current vs. drain-source voltage (2) drain current vs. drain-source voltage (3) drain-source on-state resistance vs. gate-source voltage (4) drain-source on-state resistance vs. ambient temperature (5) forward transfer admittance vs. drain current (6) source current vs. diode forward voltage xp202a0003mr -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 drain-source voltage v ds (v) drain current i d (a) v gs = -2.5v -3.0v -3.5v -4.0v -4.5v -6.0v -10.0v -16.0v ta= 25 pulse test xp202a0003mr -6 -5 -4 -3 -2 -1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate-source voltage v gs (v) drain current i d (a) v ds = -10v pulse tes t ta= 75 ta= 25 ta= -25 xp202a0003mr 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 ambient temperature ta ( ) static drain-source on-state resistance r ds (on) ? ) v gs = -4.5v, i d = -1.5a v gs = -10v, i d = -1.5a v gs = -4.0v, i d = -1.0a xp202a0003mr 0 50 100 150 200 250 300 -16 -14 -12 -10 -8 -6 -4 -2 0 gate-source voltage v gs (v) static drain-source on-state resistance: r ds (on) ( ? ) ta= 25 i d = -1.5a i d = -1.0a xp202a0003mr 0.1 1 10 100 0.01 0.1 1 10 drain current i d (a) forward transfer admittance |yfs| (s) ta= -25 ta=25 ta=75 v ds = - 10v xp202a0003mr 0.01 0.1 1 10 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 diode forw ard voltage v sd (v) source current i s (a) v gs = 0v ta= 75 ta=-25 ta=25
4/5 XP202A0003MR-G (7) switching time vs. drain current (8) ciss, coss, crss vs. drain-source voltage (9) gate-source voltage vs. gate charge (10) area of safe operation xp202a0003mr 10 100 1000 0 5 10 15 20 25 30 drain-source voltage v ds (v) ciss, coss, crss (pf ) f=1mhz cis s cr s s cos s xp202a0003mr -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 012345678910 gate charge: qg (nc) gate-source voltage v gs (v) v ds = - 15v, i d = -3a xp202a0003mr 1 10 100 1000 0.1 1 10 drain current i d (a) switching time t (ns) td(on) tr td(off) tf v gs = -10v, v ds = - 15v xp202a0003mr 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain-source voltage: v ds (v) drain current: i d (a) dc oper ation 1000ms 100ms 10ms 1ms 0.1ms ta=25 sing le puls e when mounted on ceramic substr at e (900mm 2 x 0.8mm) oper ation in this area is limited by r ds ( on) i d =- 12a i d =-3a typical performance characteristics
5/5 XP202A0003MR-G 1. the products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. consult us, or our representatives before use, to confirm that the informat ion in this datasheet is up to date. 2. we assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. the products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. please use the products listed in this datasheet within the specified ranges. should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. we assume no responsibility for damage or loss due to abnormal use. 7. all rights reserved. no part of this dat asheet may be copied or reproduced without the prior permission of torex semiconductor ltd.
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