summary v (br)dss = 20v; r ds(on) = 0.12 i d = 3.1a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23-6 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control device marking ? 2a1 zxmn2a01e6 20v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN2A01E6TA 7? 8mm 3000 units zxmn2a01e6tc 13? 8mm 10000 units ordering information top view pinout s o t 2 3 - 6 product specification sales@twtysemi.com 1 of 3 4008-318-123 http://www.twtysemi.com
parameter symbol value unit junction to ambient (a) r ja 113 c/w junction to ambient (b) r ja 70 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 10 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. thermal resistance parameter symbol limit unit drain-source voltage v dss 20 v gate source voltage v gs 12 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d 3.1 2.5 2.5 a pulsed drain current (c) i dm 11 a continuous source current (body diode) (b) i s 2.4 a pulsed source current (body diode) (c) i sm 11 a power dissipation at t a =25c (a) linear derating factor p d 1.1 8.8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.7 13.6 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings zxmn2a01e6 product specification sales@twtysemi.com 2 of 3 4008-318-123 http://www.twtysemi.com
parameter symbol min. typ. max. unit c onditions. static drain-source breakdown voltage v (br)dss 20 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =20v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) 0.7 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.12 0.225 ? ? v gs =4.5v, i d =4a v gs =2.5v, i d =1.5a forward transconductance (1)(3) g fs 6.1 s v ds =10v,i d =4a dynamic (3) input capacitance c iss 303 pf v ds =15 v, v gs =0v, f=1mhz output capacitance c oss 59 pf reverse transfer capacitance c rss 30 pf switching (2) (3) turn-on delay time t d(on) 2.49 ns v dd =10v, i d =4a r g =6.0 ? ,v gs =5v rise time t r 5.21 ns turn-off delay time t d(off) 7.47 ns fall time t f 4.62 ns total gate charge q g 3.0 nc v ds =10v,v gs =4.5v, i d =4a gate-source charge q gs 0.8 nc gate-drain charge q gd 1.0 nc source-drain diode diode forward voltage (1) v sd 0.9 0.95 v t j =25c, i s =3.2a, v gs =0v reverse recovery time (3) t rr 23 ns t j =25c, i f =4a, di/dt= 100a/ s reverse recovery charge (3) q rr 5.65 nc electrical characteristics (at t a = 25c unless otherwise stated) notes: (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. zxmn2a01e6 product specification sales@twtysemi.com 3 of 3 4008-318-123 http://www.twtysemi.com
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