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inchange semiconductor isc product specification isc silicon npn power transistor 2SD2236 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) wide area of safe operation complement to type 2sb1477 applications designed for driver and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2236 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter beakdown voltage i c = 10ma; i b = 0 100 v v (br)cbo collector-base beakdown voltage i c = 50 a; i e =0 100 v v (br)ebo emitter-base beakdown voltage i e = 50 a; i c =0 5 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.3a b 2.0 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 60 320 ? h fe classifications d e f 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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