vishay siliconix si7886adp document number: 73156 s-51566-rev. c, 29-mar-06 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? trenchfet ? power mosfet ? optimized for ?low side? synchronous rectifier operation ? new low thermal resistance powerpak ? package with low 1.07 mm profile ? 100 % r g tested features ? dc/dc converters ? synchronous rectifiers product summary v ds (v) r ds(on) ( )i d (a) q g (typ) 30 0.0040 at v gs = 10 v 25 47 0.0048 at v gs = 4.5 v 23 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7886ADP-T1 SI7886ADP-T1-e3 (lead (pb)-free) n-channel mosfe t g d s notes: a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless pack age. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. c. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 25 15 a t a = 70 c 20 12 pulsed drain current (10 s pulse width) i dm 60 continuous source current (diode conduction) a i s 4.5 1.6 avalanche current l = 0.1 mh i as 50 single pulse avalanche energy e as 125 mj maximum power dissipation a t a = 25 c p d 5.4 1.9 w t a = 70 c 3.4 1.2 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b,c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 18 23 c/w steady state 50 65 maximum junction-to-case (drain) steady state r thjc 1.0 1.5 available rohs* compliant
www.vishay.com 2 document number: 73156 s-51566-rev. c, 29-mar-06 vishay siliconix si7886adp notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless noted specifications t j = 25 c, unless otherwise noted parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 25 a 0.0032 0.0040 v gs = 4.5 v, i d = 23 a 0.0037 0.0048 forward transconductance a g fs v ds = 15 v, i d = 25 a 90 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.7 1.1 v dynamic b input capacitance c iss v ds = 15 v, v ss = 0 v, f = 1 khz 6450 pf output capacitance c oss 873 reverse transfer capacitance c rss 402 total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 25 a 47 60 nc gate-source charge q gs 12.5 gate-drain charge q gd 9.0 gate resistance r g 0.5 1.0 1.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1.0 a, v gen = 10 v, r g = 6 17 30 ns rise time t r 14 25 turn-off delay time t d(off) 158 230 fall time t f 43 65 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/s 50 80 output characteristics 0 10 20 30 40 50 60 0246810 v gs = 10 thru 3 v 2 v v ds - drain-to-source voltage (v) - drain current (a) i d transfer characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 73156 s-51566-rev. c, 29-mar-06 www.vishay.com 3 vishay siliconix si7886adp typical characteristics 25 c, unless noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.0000 0.0015 0.0030 0.0045 0.0060 0.0075 0 1020304050 v gs = 10 v - on-resistance ( r ds(on) ) i d - drain current (a) v gs = 4.5 v 0 1 2 3 4 5 6 0 102030405060 v ds = 15 v i d = 25 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 1.0 1.2 1 10 50 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 c rss v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 10 v i d = 25 a t j - junction temperature (c) r ds (on) - on-resistance (normalized) 0.000 0.005 0.010 0.015 0.020 0.025 0246810 i d = 25 a - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 73156 s-51566-rev. c, 29-mar-06 vishay siliconix si7886adp typical characteristics 25 c, unless noted threshold voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0 120 200 40 80 power (w) time (sec) 160 110 0.1 0.01 0.001 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 ms - drain current (a) i d 0.1 t c = 25 c single pulse 10 ms 100 ms dc 10 s 100 s *limited by r ds(on) v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified > normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 73156 s-51566-rev. c, 29-mar-06 www.vishay.com 5 vishay siliconix si7886adp typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73156 . normalized thermal transient impedance, junction-to-case 10 - 3 10 - 2 1 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance 0.05 0.02 single pulse
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