2SA1700 transistor (npn) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -200 ma collector-base voltage v (br)cbo : -400 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 10 a, i e =0 -400 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma, i b =0 -400 v emitter-base breakdown voltage v (br)ebo i e =- 10 a, i c =0 -5 v collector cut-off current i cbo v cb =- 300 v, i e =0 -0.1 a emitter cut-off current i ebo v eb =- 4 v, i c =0 -0.1 a dc current gain h fe(1) v ce =- 10 v, i c =- 50 ma 60 200 collector-emitter saturation voltage v ce(sat) i c =- 50 ma, i b =- 5 ma -0.6 v base-emitter saturation voltage v be(sat) i c =- 50 ma, i b =- 5 ma -1 v transition frequency f t v ce =- 30 v, i c =- 10 ma 70 mhz classification of h fe(1) rank d e range 60-120 100-200 1 2 3 to-251 1. base 2. collector 3. emitter 2SA1700 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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