inchange semiconductor isc product specification isc silicon npn darlington power transistor bdw73/a/b/c/d description collector current -i c = 8a high dc current gain-h fe = 750(min.)@ i c = 3a complement to type bdw74/a/b/c/d applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdw73 45 bdw73a 60 BDW73B 80 bdw73c 100 v cbo collector-base voltage bdw73d 120 v bdw73 45 bdw73a 60 BDW73B 80 bdw73c 100 v ceo collector-emitter voltage bdw73d 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i b b base current-continuous 0.3 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.56 /w rth j-c thermal resistance, junction to case 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor bdw73/a/b/c/d electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdw73 45 bdw73a 60 BDW73B 80 bdw73c 100 v (br)ceo collector-emitter breakdown voltage bdw73d i c = 30ma; i b =0 120 v v ce(sat)-1 collector-emitter saturation voltage i c = 3a; i b = 12ma b 2.5 v v ce(sat)-2 collector-emitter saturation voltage i c = 8a; i b = 80ma b 4.0 v v be( on ) base-emitter on voltage i c = 3a; v ce = 3v 2.5 v v ecf c-e diode forward voltage i f = 8a 3.5 v bdw73 v ce = 30v; i b = 0 b bdw73a v ce = 30v; i b = 0 b BDW73B v ce = 40v; i b = 0 b bdw73c v ce = 50v; i b = 0 b i ceo collector cutoff current bdw73d v ce = 60v; i b = 0 b 0.5 ma bdw73 v cb = 45v; i e = 0 v cb = 45v; i e = 0; t j = 150 0.2 5.0 bdw73a v cb = 60v; i e = 0 v cb = 60v; i e = 0; t j = 150 0.2 5.0 BDW73B v cb = 80v; i e = 0 v cb = 80v; i e = 0; t j = 150 0.2 5.0 bdw73c v cb = 100v; i e = 0 v cb = 100v; i e = 0; t j = 150 0.2 5.0 i cbo collector cutoff current bdw73d v cb = 120v; i e = 0 v cb = 120v; i e = 0; t j = 150 0.2 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2.0 ma h fe-1 dc current gain i c = 3a; v ce = 3v 750 20000 h fe-2 dc current gain i c = 8a; v ce = 3v 100 switching times t on turn-on time 1.0 s t off turn-off time i c = 3a; i b1 = -i b2 = 12ma; v be(off) = -3.5v, r l =10 5.0 s isc website www.iscsemi.cn 2
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