c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 www. ruichips .com ru1h l 8 l p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage - 100 v gss gate - source voltage 16 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuou s forward current t c =25 c - 10 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c - 40 a t c =25 c - 1 0 i d continuous drain current ( v gs = - 10v) t c =100 c - 8 a t c =25 c 40 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 3 .75 c /w drain - source avalanche ratings e as av alanche energy, single pulsed 25 m j ? - 100 v/ - 1 0 a, r ds ( on ) = 1 2 0 m ( tpy.)@ v gs = - 10v r ds ( on ) = 180 m ( tpy.)@ v gs = - 4.5 v ? super high dense cell design ? esd protected ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? power management ? dc/dc converters absolute maximum ratings p - channel mosfe t to252
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 2 www. ruichips .com ru1h l 8 l electrical characteristics ( t c =25 c unless otherwise noted) ru1h l 8 l symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds = - 250 m a - 100 v v ds = - 100 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1 - - 2. 5 v i gss gate leakage current v gs = 16 v, v ds =0v 10 m a v gs = - 10 v, i ds = - 8 a 1 2 0 150 m w r ds ( on ) drain - source on - state resistance v gs = - 4.5 v, i ds = - 5 a 180 25 0 m w notes : pulse width limited by safe operating area. limited by t jmax , i as = 1 0 a, v dd = - 60 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by de sign, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = - 8 a, v gs =0v - 1. 2 v t rr reverse recovery time 3 0 ns q rr reve rse recovery charge i sd = - 1 0 a, dl sd /dt=100a/ m s 58 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 6 w c iss input capacitance 1 55 0 c oss output capacitance 2 3 0 c rss reverse transfer capacitance v gs =0v, v ds = - 50 v, frequency=1.0mhz 1 1 0 pf t d ( on ) turn - on delay time 1 5 t r turn - on rise time 1 9 t d ( off ) turn - off delay time 3 0 t f turn - off fall time v dd = - 50 v, r l = 5 w , i ds = - 1 0 a, v gen = - 10v, r g = 6 w 1 6 ns gate charge characteristics q g total gate charge 2 6 q gs gate - source charge 8 q gd gate - drain charge v ds = - 80 v, v gs = - 10v, i ds = - 1 0 a 9 n c
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 3 www. ruichips .com ru1h l 8 l typical characteristics power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 4 www. ruichips .com ru1h l 8 l typical characteristics output characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gat e threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 5 www. ruichips .com ru1h l 8 l typical characteristics drain - source on resistance source - drain diode forward normalized on resistance - i s - source current (a) t j - junction temperature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v g s - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 6 www. ruichips .com ru1h l 8 l avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 7 www. ruichips .com ru1h l 8 l ord ering and marking information device marking package packaging quantity reel size tape width ru 1hl8 l ru1hl8 l to - 252 tape&reel 2500 13 16mm
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 8 www. ruichips .com ru1h l 8 l package information to252 - 2l all d imensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 2.200 2.400 0.087 0.094 l 9.800 10.400 0.386 0.409 a1 0.000 0.127 0.000 0.005 l1 2.900 ref. 0.114 ref. b 0.660 0.860 0.026 0.034 l2 1.400 1.700 0.055 0.067 c 0.460 0.580 0.018 0.023 l3 1.600 ref. 0.063ref. d 6.500 6.700 0.256 0.264 l4 0.600 1.000 0.024 0.039 d1 5.100 5.460 0.201 0.215 1.100 1.300 0.043 0.051 d2 4.830 ref. 0.190 ref. 0 8 0 8 e 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 v 5.350 ref. 0.211 ref.
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 9 www. ruichips .com ru1h l 8 l customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom c ontact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichi ps.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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