inchange semiconductor isc product specification isc silicon npn power transistor BDY39 description excellent safe operating area dc current gain- : h fe =25-100@i c = 4a collector-emitter saturation voltage- : v ce(sat )= 0.7v(max)@ i c = 4a applications designed for use in high power af output stages and in stabilized power supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v cer collector-emitter voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 22.5 a i b b base current 7 a p c collector power dissipation@t c =25 115 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.5 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon npn power transistor BDY39 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c =200ma; i b =0 b 60 v v cev(sus) collector-emitter sustaining voltage i c =100ma; v be = -1.5v 100 v v cer(sus) collector-emitter sustaining voltage i c =200ma; r be =100 70 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 0.4a b 0.7 v v be( on ) base-emitter on voltage i c = 4a; v ce = 4v 1.1 v i ceo collector cutoff current v ce = 30v; i b =0 b 0.7 ma i cev collector cutoff current v ce = 100v; v be = -1.5v v ce = 60v; v be = -1.5v, t c =150 1.0 5.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe dc current gain i c = 4a; v ce = 4v 25 100 f t current gain-bandwidth product i c = 0.3a; v ce = 2v 0.8 mhz isc website www.iscsemi.cn 2
|
