2011-09-15 1 bga427 in sieget ? 25-technologie si-mmic-amplifie r 1 2 3 4 ? cascadable 50 ? -gain block ? unconditionally stable ? gain | s 21 | 2 = 18.5 db at 1.8 ghz (appl.1) gain | s 21 | 2 = 22 db at 1.8 ghz (appl.2) i p 3out = +7 dbm at 1.8 ghz ( v d =3v, i d =9.4ma) ? noise figure nf = 2.2 db at 1.8 ghz ? typical device voltage v d = 2 v to 5 v ? reverse isolation > 35 db (appl.2) ? pb-free (rohs compliant) package eha07378 v 2 1 in out + 4 3 gnd circuit diagram esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bga427 bms 1, in 2, gnd 3, +v 4, out sot343 maximum ratings parameter symbol value unit device current i d 25 ma device voltage v d ,+v 6 v total power dissipation t s = 120 c p tot 150 mw rf input power p rfin -10 dbm junction temperature t j 150 c ambient temperature range t a -65 ... 150 storage temperature range t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 295 k/w 1 for calculation of r thja please refer to application note thermal resistance
2011-09-15 2 bga427 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics v d = 3 v, z o = 50 ? , testfixture appl.1 insertion power gain f = 0.1 ghz f = 1 ghz f = 1.8 ghz | s 21 | 2 - - - 27 22 18.5 - - - db reverse isolation f = 1.8 ghz s12 - 22 - noise figure f = 0.1 ghz f = 1 ghz f = 1.8 ghz nf - - - 1.9 2 2.2 - - - intercept point at the output f = 1.8 ghz ip 3out - + 7 - dbm return loss input f = 1.8 ghz rl in - >12 - db return loss output f = 1.8 ghz rl out - >9 - typical configuration appl.2 appl.1 eha07380 2.2 pf 100 pf rf in 100 pf gnd rf out 100 nh 10 nf 100 pf + v bga 427 eha07379 100 pf 100 pf 1 nf rf out rf in gnd + v bga 427 note: 1) large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) the use of plated through holes right at pin 2 is essential for pc-board-applications. thin boards are recommended to minimize the parasitic inductance to ground.
2011-09-15 3 bga427 s-parameters at t a = 25 c, (testfixture, appl.1) f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang v d = 3v, z o = 50 ? 0.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3 0.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.258 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 spice-model bga 427 eha07381 3 r r 1 p1 c p2 c 1 c r 2 p3 cc p4 p5 cr 4 11 14 13 t2 12 c?-e?- including parasitics diode out bga 427-chip in gnd + v t1 t1 t501 t2 t501 r 1 14.5k ? r 2 280 ? r 3 2.4k ? r 4 170 ? c 1 2.3pf c p1 0.2pf c p2 0.2pf c p3 0.6pf c p4 0.1pf c p5 0.1pf c'-e'-diode t1
2011-09-15 4 bga427 transistor chip data t1 (berkley-spice 2g.6 syntax) : bf = 83.23 - ikf = 0.16493 a br = 10.526 - ikr = 0.25052 a rb = 15 ? re = 1.9289 vje = 0.70367 v xtf = 0.3641 - ptf = 0 deg mjc = 0.48652 - cjs = 0ff xtb = 0 - fc = 0.99469 - nf = 1.0405 - ise = 15.761 fa nr = 0.96647 - isc = 0.037223 fa irb = 0.21215 a rc = 0.12691 ? mje = 0.37747 - vtf = 0.19762 v cjc = 96.941 ff xcjc = 0.08161 - vjs = 0.75 v eg = 1.11 ev tnom 300 k is = 0.21024 fa vaf = 39.251 v ne = 1.7763 - var = 34.368 v nc = 1.3152 - rbm = 1.3491 ? cje = 3.7265 ff tf = 4.5899 ps itf = 1.3364 ma vjc = 0.99532 v tr = 1.4935 ns mjs = 0 - xti = 3 - c'-e'-diode data (berkley-spice 2g.6 syntax) : rs = 20 ? is = 2 fa n = 1.02 - all parameters are ready to use, no scaling is necessary package equivalent circuit: l bi = 0.36 nh l bo = 0.4 nh l ei = 0.3 nh l eo = 0.15 nh l ci = 0.36 nh l co = 0.4 nh c be = 95 ff c cb = 6 ff c ce = 132 ff c 1 =28 ff c 2 =88 ff c 3 = 8 ff l 1 = 0.6 nh l 2 = 0.4 nh eha07382 l bi 1 c be c bo l ei l l eo cb c ci l c 3 co l ce c chip 11 13 12 c?-e?- in diode c 2 2 l out l 1 14 + v gnd bga 427 valid up to 3ghz extracted on behalf of infineon technologies ag by: institut fr mobil-und satellitentechnik (imst) for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/silicondiscretes
2011-09-15 5 bga427 noise figure nf = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz rtf-1 0 0.5 1 1.5 2 2.5 3 3.5 4 db 5 rtf-2 vd=5v, id=17.5ma vd=3v, id=9.5ma insertion power gain | s 21 | 2 = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 20 25 db 35 | s 21 | 2 intercept point at the output ip 3out = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 dbm 25 ip 3out
2011-09-15 6 bga427 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2011-09-15 7 bga427 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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