d a t a sh eet product speci?cation supersedes data of 1996 jun 11 1996 oct 03 discrete semiconductors byw54 to byw56 controlled avalanche rectifiers handbook, 2 columns m3d116
1996 oct 03 2 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 features glass passivated high maximum operating temperature low leakage current excellent stability guaranteed avalanche energy absorption capability available in ammo-pack. description rugged glass package, using a high temperature alloyed construction. this package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page (datasheet) mam047 ka fig.1 simplified outline (sod57) and symbol. limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage byw54 - 600 v byw55 - 800 v byw56 - 1000 v v rwm crest working reverse voltage byw54 - 600 v byw55 - 800 v byw56 - 1000 v v r continuous reverse voltage byw54 - 600 v byw55 - 800 v byw56 - 1000 v i f(av) average forward current t tp =45 c; lead length = 10 mm; averaged over any 20 ms period; see figs 2 and 4 - 2.0 a t amb =80 c; pcb mounting (see fig.9); averaged over any 20 ms period; see figs 3 and 4 - 0.8 a i fsm non-repetitive peak forward current t = 10 ms half sinewave - 50 a e rsm non-repetitive peak reverse avalanche energy l = 120 mh; t j =t j max prior to surge; inductive load switched off - 20 mj t stg storage temperature - 65 +175 c t j junction temperature see fig.5 - 65 +175 c
1996 oct 03 3 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 electrical characteristics t j =25 c; unless otherwise speci?ed. thermal characteristics note 1. device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 3 40 m m, see fig.9. for more information please refer to the general part of associated handbook . symbol parameter conditions min. typ. max. unit v f forward voltage i f =1a; t j =t j max ; see fig.6 -- 0.8 v i f = 1 a; see fig.6 -- 1.0 v v (br)r reverse avalanche breakdown voltage i r = 0.1 ma byw54 650 -- v byw55 900 -- v byw56 1100 -- v i r reverse current v r =v rrmmax ; see fig.7 -- 1 m a v r =v rrmmax ; t j = 165 c; see fig.7 -- 150 m a t rr reverse recovery time when switched from i f = 0.5 a to i r = 1 a; measured at i r = 0.25 a; see fig.10 - 3 - m s c d diode capacitance v r = 0 v; f = 1 mhz; see fig.8 - 50 - pf symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w
1996 oct 03 4 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 graphical data fig.2 maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). a = 1.57; v r =v rrmmax ; d = 0.5; lead length 10 mm. handbook, halfpage 3 2 1 0 mbg044 0 40 200 80 120 160 t tp ( c) i f(av) (a) fig.3 maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). a = 1.57; v r =v rrmmax ; d = 0.5; device mounted as shown in fig.9. handbook, halfpage 0 i f(av) (a) 40 200 1.6 1.2 0.4 0 0.8 80 120 160 t amb ( c) mbg054 fig.4 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. handbook, halfpage 0123 4 3 1 0 2 mgc745 2 p (w) i f(av) (a) 1.42 2.5 a = 3 1.57 solid line = v r . dotted line = v rrm ; d = 0.5. fig.5 maximum permissible junction temperature as a function of reverse voltage. 0 1200 0 mbh387 100 200 800 400 v r (v) t j ( c) 55 54 56
1996 oct 03 5 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 solid line: t j =25 c. dotted line: t j =t j max . fig.6 forward current as a function of forward voltage; maximum values. handbook, halfpage 0 15 i f 10 5 0 12 mgc735 v f (v) (a) fig.7 reverse current as a function of junction temperature; maximum values. handbook, halfpage 10 3 10 ( m a) i r 2 10 1 10 - 1 200 0 mgc734 40 80 120 160 t j ( o c) max v r =v rrmmax . fig.8 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j =25 c. handbook, halfpage 10 2 mbg031 10 1 1 10 2 10 c d (pf) v r (v) fig.9 device mounted on a printed-circuit board. handbook, halfpage mga200 3 2 7 50 25 50 dimensions in mm.
1996 oct 03 6 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 fig.10 test circuit and reverse recovery time waveform and definition. input impedance oscilloscope: 1 m w , 22 pf; t r 7 ns. source impedance: 50 w ; t r 15 ns. handbook, full pagewidth 10 w 1 w 50 w 25 v dut mam057 + t rr 0.5 0 0.5 1.0 i f (a) i r (a) t 0.25
1996 oct 03 7 philips semiconductors product speci?cation controlled avalanche recti?ers byw54 to byw56 package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. dimensions in mm. the marking band indicates the cathode. fig.11 sod57. handbook, full pagewidth 3.81 max mbc880 ka 28 min 28 min 4.57 max 0.81 max
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please read information about some discontinued variants of this product . byw54 to byw56 links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. the similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. partnumber north american partnumber order code (12nc) marking/packing package device status buy online byw54 byw54 t/r 9333 636 10113 standard marking * reel pack, axial, standard sod57 full production 9333 636 10133 standard marking * ammopack, axial, 52mm sod57 full production byw55 byw55 t/r 9333 636 20113 standard marking * reel pack, axial, standard sod57 full production 9333 636 20133 standard marking * ammopack, axial, 52mm sod57 full production byw56 byw56 t/r 9333 636 30113 standard marking * reel pack, axial, standard sod57 full production 9333 636 30133 standard marking * ammopack, axial, 52mm sod57 full production byw56 amo 9333 636 30163 standard marking * multi pack, ammo, axial, 52mm sod57 full production find similar products: copyright ? 2000 royal philips electronics all rights reserved. terms and conditions .
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