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g : lead free device HY3506P/w hy3506 p p : to220-3l yyxxx ww date code hooyi hooyi hooyi hooyi www.hooyi-semi.com n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t 1 r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s 60 v / 190 a r d s ( o n ) = m w ( t y p . ) @ v g s = 1 0 v n - c h a n n e l m o s f e t g s d n o t e : l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . package code assembly material ? yyxxxjww g g d s a p p l i c a t i o n s r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) power management for inverter systems. 100% avalanche tested switching application 3.0 g d s hy3506 w ? w : to247-3l to-220 to-247 ? yyxxxjww g
1.3*** 750** 60 HY3506P/w HY3506P/w 2 a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 60 v gss gate - source voltage 25 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 190 a mounted on large heat sink i d m t c =25 c a t c =25 c 190 i d continuous drain current t c =100 c 132 a t c =25 c 306 p d maximum power dissipation t c =100 c 153 w r q jc thermal resistance - junction to case 0.49 r q ja thermal resistance - junction to amb ient 62.5 c /w avalanche ratings e as avalanche energ y , single pulsed l=0.3mh j e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a - - v v ds = 60 v, v gs =0v - - 1 i dss zero gate voltage drain current t j =85 c - - 10 m a v gs(th) gate thr eshold voltage v ds =v gs , i ds =250 m a 2.0 3.0 4.0 v i gss gate leakage current v gs = 25 v, v ds =0v - - 100 n a r ds(on) drain - source on - state resistance v gs =10v, i ds = 95 a - 3.0 4.5 m w diode characteristics v sd diode forward voltage i sd = 95 a, v gs =0v - 0.8 1.2 v t rr reverse recovery time - 60 - ns q rr reverse recovery charge i sd = 95 a, dl sd /dt = 100a/ m s - 100 - nc www.hooyi-semi.com note ?g note ?g ** drain current is limited by junction temperature *** vd=48v * repetitive rating ; pulse width limiited by junction temperature pulsed drain current * * *
- 12 HY3506P/w HY3506P/w 3 e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter test condition s min. typ. max. unit dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 1.4 - w c iss input capacitance - 13100 - c oss output capacitance - 1010 - c rs s reverse transfer capacitance v gs =0v, v ds =25v, f requency =1.0mhz - 402 - pf t d(on) turn - on delay time - 23 - t r turn - on rise time - t d(off) turn - off delay time - 77 - t f turn - off fall time - 27 - ns gate charge characteristics q g total gate charge - 160 q gs gate - source charge - 25 - q gd gate - drain charge v ds = 48 v, v gs = 10 v, i d s = 95 a - 38 - nc www.hooyi-semi.com note * : pulse test ; pulse width 3 00 m s, duty cycle 2% . v dd = 30 v, r g = 6 w , i ds =95a, v gs =10 v , -
4 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 200 t c =25 o c,v g =10v www.hooyi-semi.com HY3506P/w p o w e r d i s s i p a t i o n p tot - power ( w) t j - j u n c t i o n t e m p e r a t u r e ( c ) 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 t c =25 o c s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized transient thermal resistance t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 1e-5 1e-4 0.001 0.01 0.1 1 10 1e-3 0.01 0.1 1 3 mounted on minimum pad r q ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 limited by package 225 0 .1 1 10 1 00 10 00 10ms 100us 1ms dc r d s ( o n ) l i m it t c =25 o c 0 . 01 0 .1 1 10 1 0 0 300
HY3506P/w 5 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) www.hooyi-semi.com v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold voltage v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) r ds(on) - on - resistance (m w ) g a t e - s o u r c e o n r e s i s t a n c e 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 i ds =95a -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0 1 2 3 4 5 4.5v 5.5v 5v v gs = 6,7,8,9,10v 0 20 40 60 80 100 120 0 1 2 3 4 5 6 9 7 8 v gs =10v 90 0 30 60 120 150 180 210 240 270 300
6 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) www.hooyi-semi.com HY3506P/w v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r on @t j =25 o c: 3.0m w v gs = 10v i ds = 95a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 t j =150 o c t j =25 o c 0 32 64 96 128 160 0 1 2 3 4 5 6 7 8 9 10 v ds = 30v i ds = 95a v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - c apacitance (pf) c a p a c i t a n c e 0 5 10 15 20 25 30 35 40 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 frequency=1mhz crss coss ciss 22000
7 a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus) v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10% www.hooyi-semi.com HY3506P/w
8 p a c k a g e i n f o r m a t i o n to-220 www.hooyi-semi.com HY3506P/w
9 p a c k a g e i n f o r m a t i o n to-247 www.hooyi-semi.com HY3506P/w mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0. 000 0.012 e1 3.500 ref. 0.138 ref.
10 c l a s s i f i c a t i o n p r o f i l e d e v i c e s p e r u n i t package ty pe unit quantity to - 220 tube 50 www.hooyi-semi.com HY3506P/w to - 247 tube 30
11 profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c ho lt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c www.hooyi-semi.com HY3506P/w

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