, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIP150 description ? collector-emitter breakdown voltage- : v(br)ceo= 300v(min.) ? collector-emitter saturation voltage- : vce(sat)= 2.0v(max.)@ |c= 5a applications ? designed for use in automotive ignition,switching and motor control applications. absolute maximum ratings(ta=25c) thermal characteristics symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current- continuous collector power dissipation @tc=25c junction temperature storage temperature range value 300 300 8 7 10 1.5 80 150 -65-150 unit v v v a a a w "c "c symbol rth j-c parameter thermal resistance, junction to case max 1.56 unit r/w 1 'l i. i 2 :? i2 -k j- %wi_ l_^.,v 1 1 i 3 1.base 2. collector 3- emitter to-220c package til' a ! * ? b m i m.ocv * h !'?< k *.. 1 -h' r *44- d s1^ * k c | dim a b c d f g h j k l q r s u tf r * mm win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 l 1.31 6.65 8.86 p r|-* nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn darlington power transistor TIP150 electrical characteristics tc=25*c unless otherwise specified symbol v(br)ceo v(br)cbo vce(sat)-1 vce(sa()-2 vce(sat)-3 vee(sat)-1 vee(sat)-2 vf iceo iebo hpe-1 hfe-2 hfe-3 cob parameter collector-emitter breakdown voltage collector-base breakdown voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage c-e diode forward voltage collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain collector output capacitance conditions lc=10ma, ib=0 lc= 1.0ma, ie=0 lc= 1a, ib= 10ma ic=2a, ib= 100ma lc= 5a, ib= 250ma ic=2a, ib= 100ma lc= 5a, ib= 250ma if=7a vce= 300v, ib= 0 veb= 8v; lc= 0 lc= 2.5a; vce= 6v lc= 5a; vce= 5v lc= 7a; vce= 5v le=0;vcb=10v;f=1mhz min 300 300 150 50 15 typ. max 1.5 1.5 2.0 2.2 2.3 3.5 0.25 15 150 unit v v v v v v v v ma ma pf switching times td tr tslg tf delay time rise time storage time fall time vcc = 250v, lc = 5.0 a, duty cycles=2% 0.03 0.18 3.5 1.6 u s us u s us
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