EMT1 dual pnp plastic-encapsulated transistors elektronische bauelemente 07-dec -2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features mounting possible with sot-563 automatic mounting machines. transistor elements are independent, eliminating i nterference. marking t1 package information package mpq leader size sot-563 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current C continuous i c -150 ma collector power dissipation p c 150 mw junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -60 - - v i c = -50 a, i e =0 collector-emitter breakdown voltage v (br)ceo -50 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -6 - - v i e = -50 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -60v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -7v, i c =0 dc current gain h fe 120 - 560 v ce = -6v, i c = -1ma collector-emitter saturation voltage v ce(sat) - - -0.5 v i c = -50ma, i b = -5ma transition frequency f t - 140 - mhz v ce = -12v, i c = -2ma, f=100mhz collector output capacitance c ob - - 5 pf v cb = -12v, i e =0, f=1mhz sot-563 ref. millimeter ref. millimeter min. max. min. max. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.600 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e 0.05 ref. e f j b c d g a h
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