advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -80v simple drive requirement r ds(on) 180m fast switching characteristic i d -11.2a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 3 rohs-compliant product 200810021 1 ap9585gh/j rating -80 + 25 -11.2 0.36 44.6 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v -7.1 pulsed drain current 1 -30 parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 linear derating factor thermal data g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP9585GJ) is available for low-profile applications.
ap9585gh/j electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -80 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-10a - - 180 m ? ? ,
ap9585gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 5 10 15 20 25 30 35 40 0 2 4 6 8 101214161820 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -6.0v -5.0v -4.5v v g =-3.0v 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -6.0v -5.0v -4.5v v g =-3.0v 130 135 140 145 150 155 357911 -v gs , gate-to-source voltage (v) r ds(on\) (m
ap9585gh/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds =-64v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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