01/99 b-49 j108, j109 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount SMPJ108, smpj109 at 25c free air temperature: j108 j109 process nj450 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1 a, v ds = ?v gate reverse current i gss C 3 C 3 na v gs = C 15 v, v ds = ?v gate source cutoff voltage v gs(off) C 3 C 10 C 2 C 6 v v ds = 5 v, i d = 1 a drain saturation current (pulsed) i dss 80 40 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) 33nav ds = 5 v, v gs = C 10 v dynamic electrical characteristics drain source on resistance r ds(on) 812 v gs = ?, v ds < = 0.1 v f = 1 khz drain gate capacitance c gd 15 15 pf v ds = ? v, v gs = C 10 v f = 1 mhz source gate capacitance c gs 15 15 pf v ds = ? v, v gs = C 10 v f = 1 mhz drain gate + source gate capacitance c gd + c gs 85 85 pf v ds = v gs = ? v f = 1 mhz switching characteristics typ typ turn on delay time td (on) 33ns j108 j109 rise time t r 11nsv dd 1.5 1.5 v turn off delay time td (off) 44ns v gs(off) C 12 C 7 v fall time t f 18 18 ns r l 150 150 choppers commutators analog switches 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 1:02 pm page b-49
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