spn3414 description applications the spn3414 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? 20v/4.0a,r ds(on) =55m ? @v gs =4.5v ? 20v/3.4a,r ds(on) =70m ? @v gs =2.5v ? 20v/2.8a,r ds(on) =90m ? @v gs =1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking spn3414s23rg sot-23-3l 14yw SPN3414S23RGB sot-23-3l 14yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spn3414s23rg : tape reel ; pb ? free SPN3414S23RGB : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v t a =25 4.0 continuous drain current(t j =150 ) t a =70 i d 3.4 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.6 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w spn3414 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless o therwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds Q 5v,v gs =4.5v 6 a v gs =4.5v,i d =4.0a 0.040 0.055 v gs =2.5v,i d =3.4a 0.055 0.070 drain-source on-resistance r ds(on) v gs =1.8v,i d =2.8a 0.075 0.090 ? forward transconductance gfs v ds =5v,i d =-3.6a 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 1.0 gate-drain charge q gd v ds =6v,v gs =4.5v i d 2.8a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =6v,v gs =0v f=1mhz 40 pf t d(on) 8 14 turn-on time t r 12 18 t d(off) 30 35 turn-off time t f v dd =6v,r l =6 ? i d 1.0a,v gen =4.5v r g =6 ? 12 16 ns spn3414 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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