advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 20v low on-resistance r ds(on) 14m low gate voltage drive i d 37a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 5.0 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data . storage temperature range total power dissipation 25 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.2 continuous drain current, v gs @ 10v 24 pulsed drain current 1 140 gate-source voltage 12 continuous drain current, v gs @ 10v 37 parameter rating drain-source voltage 20 200831071-1/4 AP9U18GH rohs-compliant product g d s to-252(h) g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =18a - - 14 m v gs =2.5v, i d =9a - - 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.5 v g fs forward transconductance v ds =5v, i d =18a - 18 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua i gss gate-source leakage v gs = 12v - - 100 na q g total gate charge 2 i d =18a - 21 34 nc q gs gate-source charge v ds =16v - 2.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =10v - 8.3 - ns t r rise time i d =18a - 102 - ns t d(off) turn-off delay time r g =3.3 ? v gs =5v - 24 - ns t f fall time r d =0.56 -12- ns c iss input capacitance v gs =0v - 1280 2050 pf c oss output capacitance v ds =20v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =18a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 AP9U18GH this product has been qualified for consumer market. applications or uses as criterial component in life support
AP9U18GH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 20 40 60 80 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 5.0v 4.5v 3.5v 2.5v v g = 2 .0v 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g = 2 .0v 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =4.5v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 8 10 12 14 16 18 20 0246810 vgs , gate-to-source voltage (v) r ds(on) (m ) i d =9a t c =25 :
fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP9U18GH 0 3 6 9 12 15 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v i d =18a 100 1000 10000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9u18gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement
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