2003. 3. 25 1/2 semiconductor technical data KDV258E revision no : 0 vco for uhf/vhf band. features high capacitance ratio : c 1v /c 4v =2.0(min.) low series resistance : r s =0.45 (max.) maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) variable capacitance diode silicon epitaxial planar diode type name marking 6 u characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =1 a 15 - - v reverse current i r v r =10v - - 10 na capacitance c 1v v r =1v, f=1mhz 19.0 - 21.0 pf c 4v v r =4v, f=1mhz 8.5 - 10.0 capacitance ratio k - 2.0 - - series resistance r s v r =1v, f=470mhz - - 0.45
2003. 3. 25 2/2 revision no : 0 KDV258E i - v r reverse voltage v (v) 0246810121416 reverse current i (pa) r r r 1k 10 100 ta=25 c c - v r reverse voltage v (v) 0 5 10 15 20 r 1 10 100 ta=25 c f=1mhz capacitance c (pf)
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