Part Number Hot Search : 
71308 AQY284SX IP105 S6530MG SFS1606G TC74VCX RT9166 HSPPAA
Product Description
Full Text Search
 

To Download NTJD5121NT2G Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ntjd5121n power mosfet 60 v, 295 ma, dual n ? channel with esd protection, sc ? 88 features ? low r ds(on) ? low gate threshold ? low input capacitance ? esd protected gate ? this is a pb ? free device applications ? low side load switch ? dc ? dc converters (buck and boost circuits) maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 295 ma t a = 85 c 212 t 5 s t a = 25 c 304 t a = 85 c 219 power dissipation (note 1) steady state t a = 25 c p d 250 mw t 5 s 266 pulsed drain current t p = 10  s i dm 900 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 210 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c gate ? source esd rating (hbm) esd hbm 2000 v gate ? source esd rating (mm) esd mm 200 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol value unit junction ? to ? ambient ? steady state r  ja 500 c/w junction ? to ? ambient ? t 5 s r  ja 470 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). top view sc ? 88 (sot ? 363) d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 v (br)dss r ds(on) max i d max 60 v 1.6  @ 10 v 2.5  @ 4.5 v 295 ma d 2 device package shipping ? ordering information ntjd5121nt1g sc ? 88 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram & pin assignment tf m   1 6 1 tf = device code m = date code  = pb ? free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) sc ? 88/sot ? 363 case 419b style 26 NTJD5121NT2G sc ? 88 (pb ? free) 3000 / tape & reel smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250  a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = 250  a, ref to 25 c 92 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0  a t j = 125 c 500 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 10  a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250  a 1.0 1.7 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 500 ma 1.0 1.6  v gs = 4.5 v, i d = 200 ma 1.2 2.5 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 s gate resistance r g 536  charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 20 v 26 pf output capacitance c oss 4.4 reverse transfer capacitance c rss 2.5 total gate charge q g(tot) v gs = 4.5 v, v ds = 25 v, i d = 200 ma 0.9 nc threshold gate charge q g(th) 0.2 gate ? to ? source charge q gs 0.3 gate ? to ? drain charge q gd 0.28 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 25 v, i d = 200 ma, r g = 25  22 ns rise time t r 34 turn ? off delay time t d(off) 34 fall time t f 32 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.8 1.2 v t j = 85 c 0.7 2. pulse test: pulse width 300  s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ntjd5121n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2


▲Up To Search▲   

 
Price & Availability of NTJD5121NT2G
Newark

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
81Y7047
onsemi Mosfet, Dual N-Ch, 60V, 0.295A, Sot-363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:295Ma; Continuous Drain Current Id P Channel:295Marohs Compliant: Yes |Onsemi NTJD5121NT2G 1000: USD0.094
500: USD0.114
250: USD0.136
100: USD0.169
50: USD0.202
25: USD0.244
10: USD0.357
1: USD0.465
BuyNow
0
NTJD5121NT2G
98AC2124
onsemi Nfet Sc88 60V 295Ma 1.6Oh Rohs Compliant: Yes |Onsemi NTJD5121NT2G 30000: USD0.058
18000: USD0.067
12000: USD0.072
6000: USD0.083
3000: USD0.102
BuyNow
0
NTJD5121NT2G
15R4740
onsemi Nfet Sc88 60V 295Ma 1.6Oh/ Reel Rohs Compliant: Yes |Onsemi NTJD5121NT2G 30000: USD0.058
18000: USD0.067
12000: USD0.072
6000: USD0.083
BuyNow
0

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
NTJD5121NT2GOSCT-ND
onsemi MOSFET 2N-CH 60V 0.295A SC88 150000: USD0.05681
75000: USD0.05909
30000: USD0.06954
9000: USD0.07045
6000: USD0.07954
3000: USD0.08136
1000: USD0.0909
500: USD0.1168
100: USD0.1318
10: USD0.261
1: USD0.37
BuyNow
8224

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
NTJD5121NT2G
onsemi Transistor MOSFET Array Dual N-CH 60V 295mA 6-Pin SC-88 T/R - Tape and Reel (Alt: NTJD5121NT2G) 1200000: USD0.0558
600000: USD0.0576
120000: USD0.0594
60000: USD0.0612
30000: USD0.063
18000: USD0.0648
12000: USD0.0666
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT1G
863-NTJD5121NT1G
onsemi MOSFETs NFET SC88D 60V 295mA 1: USD0.34
10: USD0.2
100: USD0.1
1000: USD0.069
3000: USD0.055
9000: USD0.046
24000: USD0.043
45000: USD0.04
99000: USD0.035
BuyNow
317606
NTJD5121NT2G
863-NTJD5121NT2G
onsemi MOSFETs NFET SC88D 60V 295mA 1: USD0.37
10: USD0.261
100: USD0.117
1000: USD0.09
3000: USD0.079
9000: USD0.075
24000: USD0.065
BuyNow
24195

Arrow Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
V36:1790_07310168
onsemi Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R 150000: USD0.0557
75000: USD0.0579
30000: USD0.0631
24000: USD0.0637
9000: USD0.069
6000: USD0.0766
3000: USD0.0774
BuyNow
6000

Verical

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
79052412
onsemi Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R 3000: USD0.0797
BuyNow
6000

Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
onsemi NTJD5121N - Small Signal Field-Effect Transistor, 0.295A, 60V, 2-Element, N-Channel, MOSFET 1000: USD0.0558
500: USD0.059
100: USD0.0617
25: USD0.0643
1: USD0.0656
BuyNow
33000

Richardson RFPD

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
NTJD5121NT2G
onsemi POWER MOSFET TRANSISTOR 12000: USD0.06
BuyNow
0

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
MFG UPON REQUEST RFQ
27850

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NTJD5121NT2G
onsemi NTJD5121NT2G RFQ
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X