8/20 1 4 2n5432 , 2n 5433, 2n5494 n - channel silicon junction field - effect transistor ? low r ds(on) ? excellent switching ? low cutoff current a bsolute maximum ratings at t a = 25 o c reverse gate sou rce & gate drain voltage - 25 v continuous forward gate cu rrent 1 0 0 ma continuous devi ce power dissipation 300 mw power derating 2.3 mw/ o c storage temperature range - 65 o c to +150 o c 2n5432 2N5433 2n5434 at 25 o c free air temperature nj450 nj450 nj903 process static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss - 25 - 25 - 25 v i g = - 1 ua, v ds = 0 v gate reverse current i gss - 200 - 200 - 200 pa v gs = - 10 v, v ds = 0 v gate source cutoff voltage v gs(off) - 4 - 10 - 3 - 9 - 1 - 4 v v ds = 10 v, v gs = 0 v drain saturation current (pulsed) i dss 150 100 30 ma v ds = 10 v, v gs = 0 v dynamic electrical characteristics drain - source on resistance r ds (on ) 5 7 10 v gs = 0 v, i d = 0 v f = 1 khz common - source input capacitance c iss 30 30 30 pf v ds = 0 v, v gs = - 10 v f = 1 mhz common - source reverse transfer capacitance c rss 15 15 15 pf v ds = 0 v, v gs = - 10 v f = 1 mhz turn - on delay time t d 4 4 4 ns v dd = - 1.5 v, v gs(on) = 0 v, v gs(off) = - 12 v, i d(on) = 10 ma rise time t r 1 1 1 ns turn - off time t off 6 6 6 ns fall time t f 30 30 30 ns www.interfet.com 715 n. glenville dr., ste. 400 richa rdson, tx 75089 (972) 238 - 9700 fax (972) 238 - 5338 surface mount smp5432, smp5433, smp5434
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