bss127 document number: ds35476 rev. 6 - 2 1 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 n-channel enhancement mode field mosfet product summary v (br)dss r ds(on) package i d t a = +25c 600v 160 ? @ v gs = 10v sc59 sot23 70ma description this new generation uses advanc ed planar technology mosfet, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions features ? low input capacitance ? high bvdss rating for power application ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 / sot23 ? case material: molded plastic ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n annealed over copper leadframe solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging bss127ssn-7 sc59 3000/tape & reel BSS127S-7 sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d e3 sc59 top view e q uivalent circuit to p view source gate drain d g s sot23 k28 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) k28 ym k29 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) sot23 sc59 k29 ym
bss127 document number: ds35476 rev. 6 - 2 2 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 600 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = +25c t a = +70c i d 50 40 ma continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 70 55 ma continuous drain current (note 5) v gs = 5v steady state t a = +25c t a = +70c i d 45 35 ma continuous drain current (note 6) v gs = 5v steady state t a = +25c t a = +70c i d 65 50 ma pulsed drain current @ t sp = +25c (notes 7) i dm 0.16 a thermal characteristics characteristic symbol value units power dissipation, @t a = +25c (note 5) p d 0.61 w thermal resistance, junction to ambient @ t a = +25c (note 5) r ja 204 c/w power dissipation, @t a = +25c (note 6) p d 1.25 w thermal resistance, junction to ambient @ t a = +25c (note 6) r ja 100 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 600 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current t j = +25c i dss ? ? 0.1 a v ds = 600v, v gs = 0v gate-body leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 3 ? 4.5 v v ds = v gs , i d = 250a static drain-source on-resistance r ds(on) ? 80 160 ? v gs = 10v, i d = 16ma ? 95 190 v gs = 5.0v, i d = 16ma forward transfer admittance |y fs | ? 76 ? ms v ds = 10v, i d = 16ma diode forward voltage v sd ? ? 1.5 v v gs = 0v, i s = 16ma dynamic characteristics (note 9) input capacitance c iss ? 21.8 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 2.2 ? reverse transfer capacitance c rss ? 0.3 ? total gate charge q g ? 1.08 ? nc v gs = 10v, v dd = 300v, i d = 0.01a gate-source charge q g s ? 0.08 ? gate-drain charge q g d ? 0.50 ? turn-on delay time t d ( on ) ? 5.0 ? ns v dd = 300v, v gs = 10v, r gen = 6 ? , i d = 10ma turn-on rise time t r ? 7.2 ? ns turn-off delay time t d ( off ) ? 28.7 ? ns turn-off fall time t f ? 168 ? ns reverse recovery time t r r ? 131 ? ns v r =300 v, i f =0.016 a, di/dt = 100a/s reverse recovery charge q r r ? 32 ? nc notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 6. device mounted on 1? x 1? fr-4 pcb with high coverage 2 oz. copper, single sided. 7. repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing.
bss127 document number: ds35476 rev. 6 - 2 3 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 v , drain -source voltage(v) figure 1 typical output characteristics ds 0246810 i , drain current d 0.030 0.025 0.020 0.015 0.010 0.005 0.000 v , gate source voltage(v) figure 2 typical transfer characteristics gs i, d r ai n c u r r e n t (ma) d 1 10 100 12345 v = 10v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and temperature d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) 10 100 1000 0 5 10 15 20 25 30 t=-55c a t=25 a c t=85 a c t=125 a c t =150 a c v = 10v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 4 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0 50 100 150 200 250 -50 -25 0 25 50 75 100 125 150 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) t , ambient temperature ( c) figure 5 gate threshold variation vs. ambient temperature a i= 250a d 1 1.5 2 2.5 3 3.5 4 i , source current (a) s v , source-drain voltage (v) figure 6 diode forward voltage vs. current sd 0.1 0.3 0.5 0.7 0.9 1.1 100 t= 25c a t= 125c a t = 150 c a t= -55c a t= 85c a 10 1
bss127 document number: ds35476 rev. 6 - 2 4 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 0 100 200 300 400 500 0 0.005 0.01 0.015 0.02 0.025 v , gate-source voltage (v) figure 7 typical on-resistance vs. drain current and gate voltage gs r , drain-source on-resistance ( ) ds(on) 0 20 40 60 80 100 120 140 160 180 200 2345678910 v , gate-source voltage (v) figure 8 typical transfer characteristic gs r() ave @ i = 20ma ds(on) d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v , drain-source voltage (v) ds figure 9 typical junction capacitance c , c a p a c i t a n c e (pf) t 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 f = 1mhz c iss c oss c rss q - (nc) g figure 10 gate charge characteristics v (v) gs 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v =25v, i =250ma ds d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 11 transient thermal resistance r(t), transient thermal resistance d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r(t)=r(t) * r r =164c/w duty cycle, d=t1/ t2 ? ja ja ja
bss127 document number: ds35476 rev. 6 - 2 5 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 package outline dimensions please see ap02002 at http://www.diodes.com/ datasheets/ap02002.pdf for latest version. sc59 sot23 suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sc59 sc59 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d - - 0.95 g - - 1.90 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 n 0.70 0.80 0.75 0 8 - all dimensions in mm sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 3.4 x 0.8 y 1.0 c 2.4 e 1.35 a m j l d b c h k g n a m j l d f b c h k g k1 x e y c z
bss127 document number: ds35476 rev. 6 - 2 6 of 6 www.diodes.com january 2013 ? diodes incorporated bss127 suggested pad layout (cont.) sot23 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z
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