? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c75 v v dgr t j = 25 c to 175 c, r gs = 1m 75 v v gsm transient 20 v i d25 t c = 25 c90 a i l(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 225 a i a t c = 25 c50 a e as t c = 25 c 400 mj p d t c = 25 c 180 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 75 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 2 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 10 m trencht2 tm power mosfet n-channel enhancement mode avalanche rated fast intrnsic rectifier IXTA90N075T2 ixtp90n075t2 v dss = 75v i d25 = 90a r ds(on) 10m ds99949b(11/09) features international standard packages 175c operating temperature high current handling capability fast intrinsic rectifier avalanche rated rohs compliant high performance trench technology for extremely low r ds(on) advantages easy to mount space savings high power density synchronous applications dc-dc converters battery chargers synchronous buck converter (for notebook system-power & general purpose point & load) ac motor drives high current switching applications power train management distributed power architecture g = gate d = drain s = source tab = drain to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N075T2 ixtp90n075t2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 28 47 s c iss 3290 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 406 pf c rss 75 pf t d(on) 14 ns t r 28 ns t d(off) 35 ns t f 20 ns q g(on) 54 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 16 nc q gd 11 nc r thjc 0.82 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 90 a i sm repetitive, pulse width limited by t jm 360 a v sd i f = 45a, v gs = 0v, note 1 0.92 1.10 v t rr 50 ns i rm 3.7 a q rm 93 nc notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 25a r g = 5 (external) i f = 50a, v gs = 0v -di/dt = 100a/ s v r = 38v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline to-263 (ixta) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. drain 3. source 4. drain bottom side
? 2009 ixys corporation, all rights reserved IXTA90N075T2 ixtp90n075t2 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 6v 5v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 7v 8v 5v 9v 6v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 45a value vs. junction temperature 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 90a i d = 45a fig. 5. r ds(on) normalized to i d = 45a value vs. drain current 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N075T2 ixtp90n075t2 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 q g - nanocoulombs v gs - volts v ds = 37.5v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 1 10 100 v d s - volts i d - amperes 100s 1ms t j = 175oc t c = 25oc single pulse r ds(on) limit 25s 10ms 100ms
? 2009 ixys corporation, all rights reserved IXTA90N075T2 ixtp90n075t2 fig. 15. resistive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 4 6 8 101214161820 r g - ohms t r - nanoseconds 10 14 18 22 26 30 34 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 37v i d = 50a, 25a i d = 50a, 25a fig. 16. resistive turn-off switching times vs. junction temperature 18 19 20 21 22 23 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 25 30 35 40 45 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 37v i d = 25a i d = 50a fig. 18. resistive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 0 10 20 30 40 50 60 70 80 90 100 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 37v i d = 25a i d = 50a fig. 13. resistive turn-on rise time vs. junction temperature 16 18 20 22 24 26 28 30 32 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? , v gs = 10v v ds = 37v i d = 50a i d = 25a fig. 14. resistive turn-on rise time vs. drain current 18 20 22 24 26 28 30 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanoseconds r g = 5 ? , v gs = 10v v ds = 37v t j = 25oc t j = 125oc fig. 17. resistive turn-off switching times vs. drain current 17 18 19 20 21 22 23 24 25 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanoseconds 15 20 25 30 35 40 45 50 55 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 37v t j = 25oc t j = 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N075T2 ixtp90n075t2 ixys ref: t_90n075t2(4v)03-06-08-b fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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