STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. description the STC4567 is the n & p-channel enhancement mode power field effect transistor using high cell density dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. this device is particularly suited for low voltage application such as notebook computer power management an d other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed . feature n-channel z 40v/6.0a, r ds(on) = 48m (typ.) @v gs = 10v z 40v/5.0a, r ds(on) = 63m @v gs = 4.5v p-channel z -40v/-7.2a, r ds(on) = 90m (typ.) @v gs = -10v z -40v/-5.0a, r ds(on) = 103m @v gs = - 4.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sop-8 package pin configuration sop-8 STC4567 2008. v1 part marking y year a product code ordering information part number package part marking STC4567s8rg sop-8 STC4567 process code : a ~ z ; a ~ z STC4567s8rg s8 : sop-8 ; r : tape reel ; g : pb ? free
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4567 2008. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical n p unit drain-source voltage v dss 40 -40 v gate-source voltage v gss 20 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 6.0 5.0 -7.2 -5.0 a pulsed drain current i dm 20 -20 a continuous source current (diode conduction) i s 2.3 -2.3 a power dissipation t a =25 t a =70 p d 2.5 1.28 2.5 1.28 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient t Q 10sec sready state r ja 52.5 80 62.5 80 /w
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4567 2008. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =10ma v gs =0v,i d =-10ma n p 40 -40 v gate threshold voltage v gs(th) v ds =vgs,i d =250 ua v ds =vgs,i d =-250ua n p 0.5 -0.8 1.0 -2.5 v gate leakage current i gss v ds =0v,v gs = 20v v ds =0v,v gs = 20v n p 100 100 na v ds =36v,v gs =0v v ds =-36v,v gs =0v n p 1 -1 zero gate voltage drain current i dss t j =55 v ds =32v,v gs =0v v ds =-32v,v gs =0v n p 5 -5 ua on-state drain current i d(on) v ds R 5v,v gs =10v v ds Q -5v,v gs =-10v n p 10 -10 a v gs = 10v, i d =6.0a v gs =-10v,i d =-7.2a n p 0.048 0.093 drain-source on-resistance r ds(on) v gs = 4.5v, i d =5.0a v gs =-4.5v,i d =-5.0 a n p 0.058 0.103 forward tran conductance g fs v ds =15v,i d =6.9a v ds =-15v,i d =-5.9a n p 22 13 s diode forward voltage v sd i s =1.0a,v gs =0v i s =-1.7a,v gs =0v n p 1.2 -1.0 v dynamic total gate charge q g n p 16 9 24 12 gate-source charge q gs n p 3 1.5 gate-drain charge q gd n-channel v ds =15v,v gs =10v i d ? 2.0a p-channel v ds =-15v,v gs =-10v i d ? -3.5a n p 2.3 2.0 nc n p 4.6 8 6.0 20 turn-on time t d(on) tr n p 3.1 10 4 20 n p 15.6 30 21 34 turn-off time t d(off) tf n-channel v ds =15v,r l =15 i d =1a,r gen =6 v gen =10v p-channel v ds =-15v,r l =15 i d =-1a,r gen =-6 v gen =10v n p 3.0 25 4.0 20 ns
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. typical characterictics (n mos) STC4567 2008. v1
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. typical characterictics (n mos) STC4567 2008. v1
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. ypical characterictics (p mos) STC4567 2008. v1
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. typical characterictics (p mos) STC4567 2008. v1
STC4567 n&p pair enhancement mode mosfet 10a / -10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. sop-8 package outline STC4567 2008. v1
|
