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  ^pioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRF530 14a, 100v, 0.160 ohm, n-channel power mosfets these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. features ? 14a, 100v ' rds(on) = 0 ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ordering information part number IRF530 package to-220ab brand IRF530 note: when ordering, use the entire part number. symbol o d go 6 s packaging jedec to-220ab drain (flange) source drain gate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
IRF530 absolute maximum ratings tc = 25c, unless otherwise specified drain to source breakdown voltage (note 1) vds drain to gate voltage (rgs = 20kl3) (note 1) vdgr continuous drain current id tc = 100c id pulsed drain current (note 3) idm gate to source voltage vg maximum power dissipation pd dissipation derating factor single pulse avalanche energy rating (note 4) eas operating and storage temperature tj tstg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s t|_ package body for 10s, see techbrief 334 tp^g caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IRF530 100 100 14 10 56 20 79 0.53 69 -55 to 175 300 260 units v v a a a v w w/c mj c c c note: = 25cto150c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate to threshold voltage zero gate voltage drain current on-state drain current (note 2) gate to source leakage current drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol bvdss vgs(th) bss 'd(on) !gss rds(on) 9fs 'd(on) tr ld(off) tf q9(tot) qgs qgd ciss cqss crss ld ls r8jc r6ja test conditions id = 250ua vgs = ov (figure 10) vgs = vds. id = 250ua vds = 95v, vgs = ov vds = 0-8 x rated bvrjss. vgs = ov, tj = 150c vds * b(on) x rds(on) max. vgs = 10v vgs = 2ov id = 8.3a, vgs = 10v (figures 8, 9) vds ^ 50v. !d = 8-3a (figure 12) vdd = 50v, id = 14a, rg = mosfet switching times independent of operating 1 vgs = 10v, id = 14a, vds ig(ref) = 1.5ma (figure 14 gate charge is essentially operating temperature 1213, rl = 3.413 are essentially emperature = 0.8 x rated bvdss ) ndependent of vds = 25v. vgs = ov, f = 1 mhz (figure 1 1 ) measured from the contact screw on tab to center of die measured from the drain lead, 6mm (0.25in) from package to center of die measured from the source lead, 6mm (0.25in) from header to source bonding pad modified mosfet symbol showing the internal devices inductances free air operation win 100 2 - - 14 - - 5.1 - - - - - - - - - - - - ~ typ - - - - - - 0.14 7.6 12 35 25 25 18 4 7 600 250 50 3.5 4.5 7.5 - - " max - 4,0 25 250 - 500 0.16 - 15 65 70 59 30 - - - - - 1.9 62.5 " units v v ma ma a na 3 s ns ns ns ns nc nc nc pf pf pf nh nh nh c/w c/w -
IRF530 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 2) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol isd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode jfc g o u 1 i i > d ^) y ,s tj = 25c, isd = 14a, vgs = 0v (figure 13) tj = 25c, isd = 14a, dlsd/c|t = 100a/|is tj = 25c, isd = 14a- d!sd/dt = 100a/u.s min - - 5.5 0.17 typ - - 120 0.6 max 14 56 2.5 250 1.3 units a a v ns uc notes: 2. pulse test: pulse width < 300ns, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 25v, starting tj = 25c, l = 530nh, rg = 25h, peak ias = 14a (figures 15, 16). typical performance curves umess otherwise specified 1.2 1.0 a i 0.8 g 0.6 0.4 0 25 50 75 100 125 150 175 tc, case temperature (c) figure 1. normalized power dissipation vs case temperature 50 75 100 125 150 tc, case temperature (c) 175 figure 2. maximum continuous drain current vs case temperature 10 tp, rectangular pulse duration (s)


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Price & Availability of IRF530
Newark

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IRF530PBF-BE3
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250
IRF530NPBF
SMC-IRF530NPBF		 Infineon Technologies AG 100V 17A 90M@10V,9A 70W N Channel To220 Mosfets Rohs 1000: USD0.176
500: USD0.176
100: USD0.176
 RFQ
246

Velocity Electronics

Part # Manufacturer Description Price BuyNow  Qty.
IRF530
 International Rectifier Our Stock RFQ
86
IRF530
 onsemi Our Stock RFQ
50
IRF530
 Intersil Corporation Our Stock RFQ
50
IRF530NSPBF
 INTERNATIONAL Our Stock RFQ
3180
IRF530NSPBF
 International Rectifier Our Stock RFQ
544

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
IRF530
 ST-Ericsson INSTOCK RFQ
80
IRF530PBF
 Vishay Intertechnologies INSTOCK RFQ
13000
IRF530A
 INSTOCK RFQ
250
IRF5305
 INSTOCK RFQ
7
IRF5305
 International Rectifier INSTOCK RFQ
50

Avnet Asia

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
IRF530PBF		 Vishay Intertechnologies MOSFET N-CHANNEL 100V (Alt: IRF530PBF) RFQ
0

Bürklin Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
24S3248		 Vishay Aztronic Vishay N channel power MOSFET, 100 V, 14 A, TO-220, IRF530PBF 1: EUR1.01
10: EUR0.63
50: EUR0.56
250: EUR0.48
1000: EUR0.42
 BuyNow
46
IRF5305PBF
24S3250		 Infineon Technologies AG Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -31 A, TO-220, IRF5305PBF 1: EUR0.5
 BuyNow
480
IRF530NPBF
24S3238		 Infineon Technologies AG Infineon Technologies N channel HEXFET power MOSFET, 100 V, 17 A, TO-220, IRF530NPBF 1: EUR0.487
100: EUR0.432
1000: EUR0.37
 BuyNow
28

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
IRF5305STRLPBF
C1S322000480773		 Infineon Technologies AG Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R 3200: USD0.462
1600: USD0.527
1000: USD0.593
500: USD0.721
200: USD0.751
100: USD0.794
50: USD0.943
10: USD1.07
1: USD1.3
 BuyNow
12775
IRF530NPBF
C1S322000480807		 Infineon Technologies AG MOSFET 50: USD0.236
10: USD0.329
5: USD0.375
 BuyNow
16880
IRF530A
C1S541901902250		 onsemi MOSFET 10: USD0.748
1: USD0.877
 BuyNow
19
IRF5305PBF
C1S322000480737		 Infineon Technologies AG Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube 1000: USD0.4
500: USD0.414
200: USD0.416
100: USD0.437
50: USD0.45
10: USD0.478
5: USD0.577
 BuyNow
11958
IRF530NSTRLPBF
C1S322000480825		 Infineon Technologies AG Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) D2PAK T/R 3200: USD0.344
1600: USD0.361
1000: USD0.363
500: USD0.496
200: USD0.525
50: USD0.59
10: USD0.597
1: USD0.982
 BuyNow
10707

CHIPMALL.COM LIMITED

Part # Manufacturer Description Price BuyNow  Qty.
IRF5305PBF
 Infineon Technologies AG The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. 1: USD0.69848
 BuyNow
998
IRF5305STRLPBF
 Infineon Technologies AG MOSFET P-CH 55V 31A D2PAK 1: USD0.9606
10: USD0.80928
100: USD0.65954
800: USD0.44629
 BuyNow
3075
IRF530NPBF
 Infineon Technologies AG MOSFET N-CH 100V 17A TO220AB 1: USD0.34163
10: USD0.27068
100: USD0.20413
500: USD0.19678
1000: USD0.19081
 BuyNow
6371
IRF530NSTRLPBF
 Infineon Technologies AG MOSFET N-CH 100V 17A D2PAK 1: USD0.46785
10: USD0.42336
100: USD0.3773
800: USD0.27479
 BuyNow
20659
IRF530PBF
 Vishay Intertechnologies 100V 14A 88W 160m��@10V,8.4A 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS 5: USD0.58712
50: USD0.39788
150: USD0.34467
500: USD0.31213
2500: USD0.29586
 BuyNow
7741

Component Electronics, Inc

Part # Manufacturer Description Price BuyNow  Qty.
IRF530
 International Rectifier IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
754
IRF530PBF
 International Rectifier IN STOCK SHIP TODAY 1000: USD1.25
100: USD1.44
1: USD1.92
 BuyNow
3
IRF5305
 International Rectifier IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
7
IRF530NSPBF
 International Rectifier IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
100

CoreStaff Co Ltd

Part # Manufacturer Description Price BuyNow  Qty.
IRF530NSTRLPBF
 Infineon Technologies AG RoHS(Ship within 1day) - D/C 2023 500: USD0.546
300: USD0.554
100: USD0.595
50: USD0.657
10: USD1.152
1: USD3.817
 BuyNow
1500
IRF5305PBF
 Infineon Technologies AG RoHS(Ship within 1day) - D/C 2022 1000: USD0.54
500: USD0.55
100: USD0.56
50: USD0.58
10: USD0.6
1: USD0.79
 BuyNow
1459
IRF530NPBF
 Infineon Technologies AG RoHS(Ship within 1day) - D/C 2022 1000: USD0.28
500: USD0.28
100: USD0.28
50: USD0.29
10: USD0.3
1: USD0.35
 BuyNow
1614

EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
IRF5305STRLPBF
SP001564840		 Infineon Technologies AG Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564840) BuyNow
223200
IRF5305PBF
SP001564354		 Infineon Technologies AG Transistor MOSFET N-CH 55V 31A 3-Pin TO-220AB Tube (Alt: SP001564354) BuyNow
195000
IRF530NSTRLPBF
SP001563332		 Infineon Technologies AG Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001563332) BuyNow
131200
IRF530PBF
IRF530PBF		 Vishay Intertechnologies Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB (Alt: IRF530PBF) BuyNow
3850
IRF530SPBF
IRF530SPBF		 Vishay Intertechnologies Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK (Alt: IRF530SPBF) BuyNow
500

IBS Electronics

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
IRF530PBF		 Vishay Intertechnologies Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3 50: USD0.6825
 BuyNow
0
IRF5305PBF
IRF5305PBF		 Infineon Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.06 Ohm; Id -31A; TO-220AB; Pd 110W; Vgs +/-20V 10: USD0.77441
 BuyNow
0

LCSC

Part # Manufacturer Description Price BuyNow  Qty.
IRF5305PBF
 Infineon Technologies AG 55V 31A 60m10V16A 110W 4V250uA 1PCSPChannel TO-220-3 MOSFETs ROHS 1000: USD0.5109
500: USD0.5279
100: USD0.5665
30: USD0.7718
10: USD0.8489
1: USD0.9894
 BuyNow
1475
IRF5305S
 JSMSEMI 35A TO-263 MOSFETs ROHS 800: USD0.2553
500: USD0.2667
100: USD0.304
30: USD0.3441
10: USD0.3829
1: USD0.4632
 BuyNow
893
IRF5305STRLPBF
 Infineon Technologies AG 55V 31A 60m10V16A 4V250uA 1PCSPChannel TO-263-2 MOSFETs ROHS 800: USD0.4554
500: USD0.4785
100: USD0.673
30: USD0.7487
10: USD0.8258
1: USD0.9802
 BuyNow
3075
IRF530NPBF
 Infineon Technologies AG 100V 17A 90m10V9A 70W 4V250uA 1PCSNChannel TO-220AB MOSFETs ROHS 1000: USD0.1947
500: USD0.2008
100: USD0.2083
50: USD0.24
10: USD0.2762
1: USD0.3486
 BuyNow
6371
IRF530NSTRLPBF
 Infineon Technologies AG 100V 17A 90m10V9A 4V250uA 1PCSNChannel TO-263-2 MOSFETs ROHS 800: USD0.2804
500: USD0.288
100: USD0.385
30: USD0.4077
10: USD0.432
1: USD0.4774
 BuyNow
20659

Maritex

Part # Manufacturer Description Price BuyNow  Qty.
IRF5305STRPBF
IRF5305STRPBF-VB		 VBsemi Electronics Co Ltd Transistor: P-MOSFET; unipolar; -60V; -35A; 0.048ohm; 61W; -55+150 st.C; SMD;TO-263 (D2PAK) 800: USD0.896
500: USD1.015
100: USD1.075
25: USD1.134
1: USD1.194
 BuyNow
100

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
 Vishay Siliconix Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3 250: USD0.6429
15100: USD0.6
 BuyNow
15100
IRF530NSTRLPBF
 Infineon Technologies AG Single N-Channel 100 V 90 mOhm 37 nC HEXFET� Power Mosfet - D2PAK 800: USD0.5214
4800: USD0.4867
 BuyNow
4800
IRF530SPBF
 Vishay Siliconix Single N-Channel 100 V 0.16 Ohms Surface Mount Power Mosfet - D2PAK-3 250: USD0.6786
500: USD0.6333
 BuyNow
500
IRF5305STRLPBF
 Infineon Technologies AG Single P-Channel 55V 0.06 Ohm 63 nC HEXFET� Power Mosfet - D2PAK 800: USD0.7071
15200: USD0.66
 BuyNow
15200
IRF530NPBF
 Infineon Technologies AG Single N-Channel 100 V 90 mOhm 37 nC HEXFET� Power Mosfet - TO-220-3 400: USD0.3786
29050: USD0.3533
 BuyNow
29050

Sense Electronic Company Limited

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
 Vishay Intertechnologies TO-220AB RFQ
6000
IRF530NSTRLPBF
 Infineon Technologies AG TO-263 RFQ
30000
IRF5305PBF
 Infineon Technologies AG TO-220 RFQ
959
IRF5305STRLPBF
 Infineon Technologies AG TO-263 RFQ
1434
IRF530NPBF
 Infineon Technologies AG TO-220 RFQ
1000

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
IRF530
 STMicroelectronics MOSFET N-CH 100V 14A TO-220 / N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 80: USD0.645
190: USD0.529
295: USD0.513
405: USD0.496
525: USD0.48
700: USD0.43
 BuyNow
93221
IRF5305SPBF
 Infineon Technologies AG HEXFET Power MOSFET | MOSFET P-CH 55V 31A D2PAK 75: USD0.707
175: USD0.58
270: USD0.562
370: USD0.544
480: USD0.526
640: USD0.471
 BuyNow
26900
IRF5305STRPBF
 Infineon Technologies AG 75: USD0.707
175: USD0.58
270: USD0.562
370: USD0.544
480: USD0.526
640: USD0.471
 BuyNow
27050
IRF530PBF
 Vishay Huntington MOSFET N-CH 100V 14A TO-220AB 90: USD0.566
220: USD0.464
335: USD0.45
460: USD0.435
595: USD0.421
800: USD0.377
 BuyNow
93200
IRF5305STRRPBF
 Infineon Technologies AG MOSFET P-CH 55V 31A D2PAK 75: USD0.707
175: USD0.58
270: USD0.562
370: USD0.544
480: USD0.526
640: USD0.471
 BuyNow
27000

Wuhan P&S

Part # Manufacturer Description Price BuyNow  Qty.
IRF530PBF
 Vishay Intertechnologies - 1: USD5.79
100: USD1.93
500: USD1.79
1000: USD1.74
 BuyNow
10000

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