ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 description stn36n10d is used trench technology to provide exce llent rds(on) and gate charge. those devices are suitable for use as load switch o r in pwm applications. pin configuration (d-pak) to-252 to-251 part marking y: year code a: week code q: process code feature 100v/20.0a, r ds(on) = 40m (typ.) @v gs = 10v 100v/20.0a, r ds(on) = 42m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252,to-251 package design
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 100 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 36.0 14.0 a pulsed drain current idm 100 a continuous source current (diode conduction) is 2.7 a power dissipation ta=25 ta=70 pd 83 30 w operation junction temperature tj 175 storgae temperature range tstg -55/175 thermal resistance-junction to ambient rja 95 /w
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ma 100 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1 3 v zero gate voltage drain current i dss v ds =80v,v gs =0v 10 na v ds =0v,v gs =20v 100 gate leakage current i gss v ds =0v,v gs =-20v -100 ua on-state drain current i d(on) v ds R 5v,v gs =10v 36 a drain-source on- resistance r ds(on) v gs =10v,i d =20a v gs =4.5v,i d =20a 40 42 48 52 m forward transconductance gfs v ds =5v,i d =20a 35 s diode forward voltage v sd i s =1.0a,v gs =0v 1.2 v dynamic total gate charge q g 61 80 gate-source charge q gs 12 gate-drain charge q gd v ds =10v,v ds =30v i d 20a 16 nc input capacitance c iss 2580 output capacitance c oss 270 reverse transfercapacitance c rss v ds =20v,vgs=0v f=1mhz 88 pf 20 turn-on time t d(on) tr 19 80 turn-off time t d(off) tf v dd =20v,r l = 4 i d =5.0a,v gen =10v r g =1 42 ns
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 typical characterictics
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 typical characterictics
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 to-252-2l package outline sop-8p
ST36N10D n channel enhancement mode mosfe t 36.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST36N10D 2009. v1 to-251 package outline sop-8p
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