DMP3056LDM document number: ds31449 rev. 11 - 2 1 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -30v 45m @ v gs = -10v -4.3a 65m @ v gs = -4.5v -3.3a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features ? low gate threshold voltage ? low on-resistance ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot26 ? case material ? molded plasti c, ?green? molding compound. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number qualification case packaging DMP3056LDM-7 commercial sot26 3000/tape & reel DMP3056LDMq-7 automotive sot26 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot26 top view top view internal schematic dma = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) dma ym s g d d d d
DMP3056LDM document number: ds31449 rev. 11 - 2 2 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25 ci d -4.3 a t < 10s t a = +25 ci d -5.8 a maximum continuous body diode forward current (note 6) i s -2.3 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -13 a thermal characteristics characteristic symbol value units total power dissipation (note 5) t a = +25c p d 1.25 w thermal resistance, junction to ambient (note 5) steady state r ja 100 c/w total power dissipation (note 6) t a = +25c p d 1.5 w thermal resistance, junction to ambient (note 6) steady state r ja 86 c/w thermal resistance, junction to case r jc 15.6 operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition static parameters (note 7) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25 c i dss ? ? -1 a v gs = 0v, v ds = -30v gate-body leakage current i gss ? ? 100 800 na v gs = 20v, v ds = 0v v gs = 25v, v ds = 0v gate threshold voltage v gs ( th ) -1.0 ? -2.1 v v gs = v ds , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? 45 65 m v gs = -10v, i d = -5a v gs = -4.5v, i d = -4.2a forward transconductance g fs ? 8 ? s v ds = -10v, i d = -4.3a diode forward voltage v sd ? ? -1.2 v v gs = 0v, i s = -1.7a dynamic parameters (note 8) input capacitance c iss ? 948 ? pf v gs = 0v, v ds = -25v, f = 1.0mhz output capacitance c oss ? 105 ? pf reverse transfer capacitance c rss ? 100 ? pf switching characteristics (note 8) total gate charge q g ? 10.1 ? nc v ds = -15v, v gs = -4.5v, i d = -6a q g ? 21.1 ? nc v ds = -15v, v gs = -10v, i d = -6a gate-source charge q gs ? 2.8 ? gate-drain charge q gd ? 3.2 ? gate resistance r g ? 13.15 ? ? v ds = 0v, v gs = 0v, f = 1mhz turn-on delay time t d ( on ) ? 10.2 ? ns v ds = -15v, v gs = -10v, i d = -1a, r g = 6.0 rise time t r ? 6.6 ? turn-off delay time t d ( off ) ? 50.1 ? fall time t f ? 22.3 ? notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper pad 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
DMP3056LDM document number: ds31449 rev. 11 - 2 3 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM fig. 1 typical output characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v , drain-source voltage (v) ds -i , d r ai n c u r r e n t (a) d v = -10v gs v = -4.5v gs v = -3.0v gs v = -2.5v gs v = -1.5v v = -1.0v gs gs fig. 2 typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 -v , gate source voltage (v) gs -i , d r ain c u r r en t (a) d 1 1.5 2 2.5 3 3.5 4 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v pulsed ds 0.01 0.1 0.1 1 10 -i , drain-source current (a) d fig. 3 on-resistance vs. drain current & gate voltage r , s t a t i c d r ain-s o u r c e on-resistance ( ) ds(on) v = -10v gs v = -4.5v gs 0 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , static drain-source on-resistance ( ) ds(on) fig. 4 static drain-source on-resistance vs. ambient temperature v = -10v i = -4.3a gs d v = -4.5v i = -3.7a gs d 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 5 gate threshold variation vs. ambient temperature -v , g a t e t h r es h o ld v o l t a g e (v) th i = -250a d fig. 6 typical total capacitance 0 5 10 15 20 25 30 -v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) 10 100 1,000 10,000 c iss c oss c rss f = 1mhz
DMP3056LDM document number: ds31449 rev. 11 - 2 4 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM 0.0001 0.001 0.01 0.1 1 10 -v , source-drain voltage (v) sd fig. 7 reverse drain current vs. source-drain voltage -i , s o u r c e c u r r e n t (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 0.2 0.4 0.6 0.8 1 1.2 fig. 8 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.5 0.7 0.9 1.1 1.3 1.5 1. 7 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -10v i = -10a gs d v = -4.5v i = -5a gs d 0.01 0.1 1 10 100 0.1 1 10 100 -v , drain-source voltage (v) ds r limited t = 150c t = 25c single pulse ds(on) j(max) a - i, d r ai n c u r r e n t (a ) d fig. 9 safe operation area dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0 2 4 6 8 10 0 5 10 15 20 25 fig. 10 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = -15v i = 6a ds d 0.2 0.4 0.6 0.8 1.2 1.4 25 50 75 100 125 150 t , ambient temperature (c) fig. 11 power dissipation vs. ambient temperature a 0 1.0 0 p , p o we r dissi p a t i o n (mw) d note 5
DMP3056LDM document number: ds31449 rev. 11 - 2 5 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM fig. 12 transient thermal response t , pulse duration time (s) 1 0.00001 0.001 0.01 0.1 1 10 100 1,000 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 96c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? 0.95 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 ? all dimensions in mm dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 a m j l d b c h k x z y c1 c2 c2 g
DMP3056LDM document number: ds31449 rev. 11 - 2 6 of 6 www.diodes.com december 2012 ? diodes incorporated DMP3056LDM important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
|
