? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c (chip capability) -195 a i lrms lead current limit, rms -160 a i dm t c = 25 c, pulse width limited by t jm - 800 a i a t c = 25 c -100 a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 595 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v ~ f c mounting force 20..120/4.5..27 n/lb. weight 5 g ds100398a(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 25 a t j = 125 c - 300 a r ds(on) v gs = -10v, i d = -105a, note 1 8 m trenchp tm power mosfet IXTR210P10T v dss = -100v i d25 = -195a r ds(on) 8 m features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v~ electrical isolation z avalanche rated z extended fbsoa z fast intrinsic rectifier z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source isoplus247 e153432 g s d isolated tab p-channel enhancement mode avalanche rated fast intrinsic rectifier preliminary technical information
IXTR210P10T ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. 1 = gate 2,4 = drain 3 = source isoplus247 (ixtr) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 60a, note 1 90 150 s c iss 69.5 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 4070 pf c rss 1100 pf t d(on) 90 ns t r 98 ns t d(off) 165 ns t f 55 ns q g(on) 740 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = -105a 200 nc q gd 155 nc r thjc 0.21 c/w r thcs 0.15 c/w resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = -105a r g = 1 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 210 a i sm repetitive, pulse width limited by t jm - 840 a v sd i f = -100a, v gs = 0v, note 1 -1.4 v t rr 200 ns q rm 930 nc i rm -12.4 a i f = -105a, -di/dt = -100a/ s v r = -100v, v gs = 0v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXTR210P10T fig. 1. output characteristics @ t j = 25oc -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4 v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -400 -350 -300 -250 -200 -150 -100 -50 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 4 v fig. 3. output characteristics @ t j = 125oc -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4v - 6v - 5 v fig. 4. r ds(on) normalized to i d = -105a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 210a i d = -105a fig. 5. r ds(on) normalized to i d = -105a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -350 -300 -250 -200 -150 -100 -50 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
IXTR210P10T ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -300 -250 -200 -150 -100 -50 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 -300 -250 -200 -150 -100 -50 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -350 -300 -250 -200 -150 -100 -50 0 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 100 200 300 400 500 600 700 q g - nanocoulombs v gs - volts v ds = - 50v i d = -105a i g = -1ma fig. 11. capacitance 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - - - - - - 100ms - external lead current limit
? 2013 ixys corporation, all rights reserved IXTR210P10T fig. 14. resistive turn-on rise time vs. drain current 80 90 100 110 120 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v t j = 25oc t j = 125oc fig. 16. resistive turn-off switching times vs. junction temperature 40 45 50 55 60 65 70 75 80 85 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 120 140 160 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v i d = -100a i d = - 50a fig. 17. resistive turn-off switching times vs. drain current 100 140 180 220 260 300 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 i d - amperes t f - nanoseconds 40 50 60 70 80 90 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v i d = - 50a i d = -100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 12345678910 r g - ohms t f - nanoseconds 0 200 400 600 800 1000 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 50a i d = -100a fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 50a i d = -100a
IXTR210P10T ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: t_140p10t(a8)8-24-11 fig. 19. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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