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  schottky barrier diode RB088NS100 l application l dimensions (unit : mm) l land size figure (unit : mm) switching power supply l features 1) cathode common type 2) high reliability 3) super low i r l structure l construction silicon epitaxial planar type l taping dimensions (unit : mm) l absolute maximum ratings (t c = 25c) repetitive peak reverse voltage v rm v reverse voltage v r v operating junction temperature t j c storage temperature t stg c l electrical and thermal characteristics (t j = 25c) symbol min. typ. max. unit forward voltage v f - - 0.87 v reverse current i r - - 5 m a thermal resistance r th(j-c) - - 2 c / w parameter 100 150 - 55 to + 150 v r =100v direct reverse voltage 10 i f =5a junction to case conditions t a =25oc, 1cycle, per diode - - symbol limits unit 110 parameter conditions duty Q0.5 a i fsm non-repetitive forward current surge peak 60hz half sin wave, non-repetitive at 100 a average forward rectified current i o glass epoxy board mounted, 60hz half sin wave, resistive load, i o /2 per diode, t c =137oc max. rb088 ns100 (1) (3) (2) 1 1 rohm : lpds jeita : to263s : manufacture date lpds 2.54 2.54 3.5 2.5 9.9 2.5 8.5 16 11 (1) (2) (3) anode anode cathode 1/5 2015.01 - rev.a data sheet www.rohm.com ? 2015 rohm co., ltd. all rights reserved.
RB088NS100 l electrical characteristic curves forward current : i f (a) forward voltage : v f (mv) v f - i f characteristics reverse current : i r ( m a) reverse voltage : v r (v) v r - i r characteristics capacitance between terminals : c t (pf) reverse voltage : v r (v) v r - c t characteristics forward voltage : v f (mv) v f dispersion map 0.001 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 t j = 75 c t j = 25 c t j = 125 c t j = - 25 c t j = 150 c 720 725 730 735 740 745 750 755 760 ave. : 731.5mv t j =25 c i f =5a n=30pcs 10 100 1000 0 10 20 30 t j = 25 c f = 1mhz 0.001 0.01 0.1 1 10 100 0 200 400 600 800 1000 1200 1400 t j = 75 c t j = 25 c t j = 125 c t j = - 25 c t j = 150 c 2/5 2015.01 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RB088NS100 l electrical characteristic curves 640 650 660 670 680 ave. : 650pf t j =25 c f=1mhz v r =0v n=10pcs 50 100 150 200 250 300 350 400 450 500 t j =25 c v r =100v n=30pcs ave. : 151na 0 5 10 15 20 25 30 35 40 ave. : 11.8ns t j =25 c i f =0.5a i r =1.0a i rr / i r =0.25 n=10pcs 50 100 150 200 250 300 350 400 450 500 ave. : 231a reverse current : i r (na) i r dispersion map capacitance between terminals : c t (pf) c t dispersion map peak surge forward current : i fsm (a) i fsm dispersion map reverse recovery time : t rr (ns) t rr dispersion map 8.3ms i fsm 1cyc t a =25 c 3/5 2015.01 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RB088NS100 l electrical characteristic curves 100 1000 1 10 100 100 1000 1 10 100 peak surge forward current : i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm - t characteristics average rectified forward current : i o (a) i o - p f characteristics reverse voltage : v r (v) v r - p r characteristics i fsm time t a =25 c 1cyc 8.3 i fsm 1cyc ms 8.3 ms t a =25 c 0.00 0.01 0.02 0.03 0.04 0 20 40 60 80 100 d = 1/2 dc sin( = 180 ) t j = 150 c 0 2 4 6 8 10 12 14 16 0 5 10 15 20 d = 1/2 dc sin( = 180 ) t j = 150 c forward power dissipation : p f (w) reverse power dissipation : p r (w) 4/5 2015.01 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RB088NS100 l electrical characteristic curves 0 5 10 15 20 25 30 0 25 50 75 100 125 150 d = 1/2 dc sin( = 180 ) 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 r th(j - a) r th(j - c) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 d = 1/2 dc sin( = 180 ) 0 5 10 15 20 25 30 ave. : 3.9kv ave. : 10.9kv average rectified forward current : i o (a) ambient temperature : t a ( c ) derating curve (i o - t a ) average rectified forward current : i o (a) case temperature : t c ( c ) derating curve (i o - t c ) electrostatic discharge test : esd(kv) c=100pf r=1.5k : c=200pf r=0 : transient thermal impedance : r th ( c /w) time : t(s) r th - t characteristics t j =150 c d=t/t v r =v rm /2 t t 0a 0v i o v r t j =150 c d=t/t v r =v rm /2 t t 0a 0v i o v r esd dispersion map 1ms im=100ma i f =5a 300 p s time glass epoxy board mounted 5/5 2015.01 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
r1 102 a www .rohm.com ? 2015 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. notes the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products are intended f or use in gene r al electronic equipment (i.e . a v/o a de vices , comm uni- cation, consumer systems , gaming/ente r tainment sets) as w ell as the applications indicated in this document. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified bel o w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pre v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)


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Price & Availability of RB088NS100
Newark

Part # Manufacturer Description Price BuyNow  Qty.
RB088NS100FHTL
92Y3825
ROHM Semiconductor Schottky Rect, Aec-Q101, 110V, 10A, To263; Repetitive Reverse Voltage Vrrm Max:110V; Forward Current If(Av):10A; Diode Configuration:Dual Common Cathode; Diode Case Style:To-263; No. Of Pins:3Pins; Forward Voltage Vf Max:870Mv; Rohs Compliant: Yes |Rohm RB088NS100FHTL 1000: USD0.879
500: USD0.918
300: USD0.967
100: USD1.04
50: USD1.11
25: USD1.2
10: USD1.27
1: USD1.42
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DigiKey

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RB088NS100TL
RB088NS100TLCT-ND
ROHM Semiconductor DIODE ARRAY SCHOTT 100V 5A LPDS 1000: USD0.61125
500: USD0.87912
100: USD1.0372
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RB088NS100FHTL
RB088NS100FHTLCT-ND
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Avnet Americas

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RB088NS100TL
RB088NS100TL
ROHM Semiconductor Schottky Barrier Diode 110V Repetitive Peak Reverse Voltage 5μA Reverse Current Cathode Common Type 3-Pin TO-263 T/R - Tape and Reel (Alt: RB088NS100TL) 100000: USD0.6357
10000: USD0.65037
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4000: USD0.69438
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RB088NS100FHTL
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ROHM Semiconductor Schottky Barrier Diodes (Corresponds to AEC-Q101) - Tape and Reel (Alt: RB088NS100FHTL) 100000: USD0.5343
10000: USD0.54663
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Mouser Electronics

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RB088NS100TL
755-RB088NS100TL
ROHM Semiconductor Schottky Diodes & Rectifiers Sctky Bar Diode LPDS, EDEC 1: USD1.63
10: USD1.39
100: USD1.09
500: USD0.906
1000: USD0.703
2000: USD0.674
5000: USD0.641
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RB088NS100FHTL
755-RB088NS100FHTL
ROHM Semiconductor Schottky Diodes & Rectifiers 100V Vr 10A Io SBD TO-263S(D2PAK) 5A 1: USD1.37
10: USD1.12
100: USD0.99
500: USD0.877
1000: USD0.601
2000: USD0.566
5000: USD0.539
10000: USD0.514
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Verical

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RB088NS100TL
76912135
ROHM Semiconductor Rectifier Diode Schottky 110V 10A 3-Pin(2+Tab) LPDS T/R 1000: USD0.7951
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250: USD0.8527
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RB088NS100FHTL
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ROHM Semiconductor Diode Schottky 110V 10A Automotive 3-Pin(2+Tab) LPDS T/R 1000: USD1.0582
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66701480
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Quest Components

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RB088NS100FHTL
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TTI

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RB088NS100TL
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ROHM Semiconductor Schottky Diodes & Rectifiers Sctky Bar Diode LPDS, EDEC 1000: USD0.68
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Ameya Holding Limited

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RB088NS100TL
ROHM Semiconductor DIODE ARRAY SCHOTTKY 100V LPDS 1: USD1.66
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RB088NS100FHTL
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Avnet Silica

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RB088NS100FHTL
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CoreStaff Co Ltd

Part # Manufacturer Description Price BuyNow  Qty.
RB088NS100TL
ROHM Semiconductor RoHS(Ship within 1day) - D/C 2023 500: USD0.438
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RB088NS100TL
ROHM Semiconductor RoHS(Ship within 1day) - D/C 2023 500: USD0.438
300: USD0.446
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ROHM Semiconductor RoHS(Ship within 1day) - D/C 2017 1000: USD0.521
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