? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c -108 a i dm t c = 25 c, pulse width limited by t jm - 510 a i a t c = 25 c -170 a e as t c = 25 c 3.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 312 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 h z ,rms, t= 1min 2500 v~ m d mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = -1ma - 2.0 - 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss, v gs = 0v - 50 a t j = 125 c - 250 a r ds(on) v gs = -10v, i d = - 85a, note 1 13 m polarp tm power mosfet p-channel enhancement mode avalanche rated IXTR170P10P v dss = -100v i d25 = -108a r ds(on) 13m ds99976b(01/13) features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z dynamic dv/dt rating z high current handling capability z avalanche rated z fast intrinsic diode z the rugged polarp tm process z low q g z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings z high power density applications z high-side switches z push pull amplifiers z dc choppers z automatic test equipment z current regulators g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXTR170P10P ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 85a, note 1 35 58 s c iss 12.6 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 4190 pf c rss 930 pf t d(on) 32 ns t r 75 ns t d(off) 82 ns t f 45 ns q g(on) 240 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = - 85a 45 nc q gd 120 nc r thjc 0.40 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v -170 a i sm repetitive, pulse width limited by t jm - 680 a v sd i f = - 85a, v gs = 0v, note 1 - 3.3 v t rr 176 ns q rm 1.25 c i rm -14.2 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = - 85a r g = 1 (external) i f = - 85a, -di/dt = -100a/ s v r = - 50v, v gs = 0v isoplus247 (ixtr) outline 1 - gate 2,4 - drain 3 - source
? 2013 ixys corporation, all rights reserved IXTR170P10P fig. 1. output characteristics @ t j = 25oc -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 v ds - volts i d - amperes v gs = -15v -10v - 9v - 5 v - 6 v - 8 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -300 -270 -240 -210 -180 -150 -120 -90 -60 -30 0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -15v -10v - 8 v - 6 v - 7 v - 9 v - 5 v fig. 3. output characteristics @ t j = 125oc -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v ds - volts i d - amperes v gs = -15v -10v - 9v - 6 v - 5 v - 7 v - 8 v fig. 4. r ds(on) normalized to i d = - 85a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -170 a i d = - 85 a fig. 5. r ds(on) normalized to i d = - 85a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -280 -240 -200 -160 -120 -80 -40 0 i d - amperes r ds(on) - normalized v gs = -10v -15v - - - - t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTR170P10P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -160 -140 -120 -100 -80 -60 -40 -20 0 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = - 40oc 25oc 125oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode -300 -270 -240 -210 -180 -150 -120 -90 -60 -30 0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 85a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - -- - 100ms - -
? 2013 ixys corporation, all rights reserved ixys ref: t_170p10p(b9)3-25-09-c IXTR170P10P fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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