QS5U28 t r ansistor rev.a 1/4 2.5v drive pch+sbd mos fet QS5U28 z s t r u c t u r e z ex te r n a l dime ns ions (unit : mm) silicon p-channel mos fet each lead has same dimensions tsmt5 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 (1) (3) (2) (4) (5) 2.8 1.6 0.4 1.9 2.9 0.95 0.95 abbreviated symbol : u28 schottky barrier diode z f eatu r es 1) t he q s 5u28 combines pch mo s f e t w i th a schottky barrier diode in t s mt 5 p a ckage. 2) low on-st ate resist ance w i th fast sw itching. 3) low volt age drive (2.5v). 4) built-in schottky barrier diode has low forw ard volt age. z a pplic a t ions load sw itch, dc/dc conversion z packag in g sp ecificatio n s z equiv a le nt c i r c uit QS5U28 tr 3000 type package code taping basic ordering unit (pieces) (1)gate (2)source (3)anode (4)cathode (5)drain ? 2 ? 1 (1) (2) (3) (5) (4) ? a protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceede d. ? 1 esd protection diode ? 2 body diode
QS5U28 t r ansistor rev.a 2/4 z a b so lu te maximu m ratin g s (t a= 25 c) ? 1 ? 1 ? 3 ? 3 ? 3 ? 2 parameter v v dss symbol ? 20 v v gss 12 a i d 2.0 a i dp 8.0 a i s ? 1.0 a i sp ? 8.0 p d 0.9 c tch 150 v v rm 25 v v r 20 a i f 1.0 a i fsm 3.0 p d 0.7 c tj 150 p d 1.25 c tstg ? 55 to + 150 limits unit w / total w /element w /element ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 mounted on a ceramic board. drain-source voltage gate-source voltage drain current source current (body diode) power dispation channel temperature repetitive peak reverse voltage reverse voltage forward current forward current surge peak power dispation junction temperature total power dispation range of strage temperature continuous pulsed continuous pulsed < mosfet > parameter symbol limits unit < di > parameter symbol limits unit < mosfet and di > z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds = 0v v dd ? 15 v v dd ? 15 v typ. max. unit conditions v (br) dss ? 20 ?? vi d = ? 1ma, v gs = 0v i dss ?? ? 1 av ds = ? 20v, v gs = 0v v gs (th) ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 9 0 125 m ? i d = ? 2a, v gs = ? 4.5v r ds (on) ? 9 7 135 m ? i d = ? 2a, v gs = ? 4.0v ? 175 2 4 5 m ? i d = ? 1a, v gs = ? 2.5v 1.6 ?? sv ds = ? 10v, i d = ? 1a c iss ? 450 ? pf v ds = ? 10v c oss ? 70 52 ? pf v gs = 0v c rss ? 10 ? p f f=1mhz t d (on) ? 16 ? ns i d = ? 1a t r ? 32 ? ns t d (off) ? 15 ? ns v gs = ? 4.5v t f ? 4.8 ? ns r l = 15 ? q g ? 1.0 ? nc r g = 10 ? r l = 7.5 ? r g = 10 ? q gs ? 1.3 ? nc v gs = ? 4.5v q gd ?? nc i d = ? 2a ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-starte resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge < mosfet > ? pulsed i s = ? 1.0v , v gs = 0v parameter symbol min. typ. max. unit conditions ? 1.2 v sd ?? v forward voltage < mosfet > body diode (source-drain) i f = ? 1.0v parameter symbol min. typ. max. unit conditions 0.45 v f ?? v forward voltage < di > v r = 20v 200 i r ?? a reverse current
QS5U28 t r ansistor rev.a 3/4 z electrical ch aracteristic cu rv es 0 0.5 1.0 1.5 2.0 2.5 3.0 gate-source voltage : ? v gs (v) fig.1 typical transfer characteristic s 0.001 0.01 drain current : ? i d (a) 10 0.1 1 ta = 125 c 25 c ? 25 c 75 c v ds = ? 10v pulsed drain current : ? i d (a) fig.2 static drain-source on-state resistance vs. drain current ( ) static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 0.01 1 1 0 10 100 1000 ta = 125 c 75 c 25 c ? 25 c v gs = ? 4.5v pulsed 0.1 0.01 1 1 0 10 100 drain current : ? i d (a) fig.3 static drain-source on-state resistance vs. drain current ( ? ) 1000 ta = 125 c 75 c 25 c ? 25 c v gs = ? 4v pulsed static drain-source on-state resistance : r ds (on) ( m ? ) drain current : ? i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ?? ) static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 0.01 1 1 0 10 100 1000 ta = 125 c 75 c 25 c ? 25 c v gs = ? 2.5v pulsed 02468 1 0 1 2 0 100 200 300 gate-source voltage : ? v gs ( v) fig.5 static drain-source on-sta te resistance vs. gate-source voltage 400 500 i d = ? 1a i d = ? 2a ta = 25 c pulsed static drain-source on-state resistance : r ds (on) ( m ? ) 0.01 0.1 1 1 0 10 100 drain current : ? i d (a) 1000 v gs =? 2.5v ? 4.0v ? 4.5v ta = 25 c pulsed static drain-source on-state resistance : r ds (on) ( m ? ) fig.6 static drain-source on-state resistance vs. drain current 0 0.4 0.6 1.0 0.2 0.8 1.2 1.4 1 .6 0.01 0.1 1 source-drain voltage : ? v sd (v) fig.7 reverse drain current vs . source-drain voltage reverce drain current : ? i dr (a ) 10 ta = 125 c 75 c 25 c ? 25 c v gs = 0v pulsed 0.01 0.1 1 1 0 1 0 0 10 100 1000 drain-source voltage : ? v ds (v) fig.8 typical capacitance vs. drain-source voltage capacitance : c (pf) ta=25 c f=1mh z v gs =0v c iss c oss c rss 0.01 0.1 1 1 0 1 10 100 drain current : ? i d (a) fig.9 switching characteristic s switching time : t (ns) 1000 t d(off) t r t d(on) t f ta=25 c v dd = ? 15v v gs = ? 4.5v r g =10 ? pulsed
QS5U28 t r ansistor rev.a 4/4 024 135 0 1 2 3 4 5 6 7 total gate charge : qg (nc) gate-source voltage : ? v gs (v) 8 6 ta=25 c v dd = ? 15v i d = ? 2a r g =10 ? pulsed fig.10 dynamic input characteristic s z measu remen t circu i t s f ig.11 switching time measurement circuit fig.12 switching waveforms fig.13 gate charge measurement circuit fig.14 gate charge waveforms v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t r t d(off) v gs i g(const) r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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