c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 www. ruichips .com ru 5h18q n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise no ted) v dss drain - source voltage 5 00 v v gss gate - source voltage 30 t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 18 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 72 a i d continuous drain current ( v gs =10v) t c =25 c 18 a t c =100 c 1 3 .5 p d maximum power dissipation t c =25 c 290 w t c =100 c 116 r q jc thermal resistance - junction to case 0.43 c /w drain - source avalanche ratings e as avalanche ene rgy, single pulsed 162 m j ? 5 00 v/ 18 a, r ds ( on ) = 0.27 w ( typ.) @ v gs =10v ? gate char ge minimized ? low crss ( typ. 2 6 pf) ? extremely high dv/dt capability ? 100% avalanche tested ? lead free and green available ? high efficiency switch mode power supplies ? lighting absolute maximum ratings n - channel mosfe t to - 247
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 2 www. ruichips .com ru 5h18q electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 5h18q unit min. typ. max. static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 5 00 v i dss zero gate voltage drain current v ds = 5 00 v, v gs =0v 1 m a t j =85 c 30 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 30 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 9 a 0.27 0.32 w notes : current limited by maximum junction temperature . limited by t jmax , i as = 1 8 a , v dd = 100 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 18 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 18 a, dl sd /dt=100a/ m s 490 ns q rr reverse recovery charge 5.8 m c dynamic char acteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 10 w c iss input capacitance v gs =0v, v ds = 25 0 v, frequency=1.0mhz 2020 pf c oss output capacitance 250 c rss reverse transfer capacitance 2 6 t d ( on ) turn - on delay time v dd = 25 0 v, r l = 14 w , i ds = 18 a, v gen =10v, r g = 25 w 30 ns t r turn - on rise time 45 t d ( off ) turn - off delay time 110 t f turn - off fall time 45 gate charge characteristics q g total gate charge v ds = 40 0 v, v gs =10v, i ds = 18 a 50 nc q gs gate - source charge 11 q gd gate - drai n charge 20
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 3 www. ruichips .com ru 5h18q typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 4 www. ruichips .com ru 5h18q typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance () v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistanc e ( ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 5 www. ruichips .com ru 5h18q typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 6 www. ruichips .com ru 5h18q avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 7 www. ruichips .com ru 5h18q ordering and marking information device marking packa ge packaging quantity reel size tape width ru 5 h 18q ru 5h18q to - 247 tube 3 0 - -
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 8 www. ruichips .com ru 5h18q package information to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min max min max min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 re f 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2012 9 www. ruichips .com ru 5h18q customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.c om editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
